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Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process
Liu, Hang3; Qi, Guopeng3; Tang, Caisheng3; Chen, Maolin2; Chen, Yang3; Shu, Zhiwen4; Xiang, Haiyan3; Jin, Yuanyuan3; Wang, Shanshan5; Li, Huimin3; Ouzounian, Miray6; Hu, Travis Shihao6; Duan, Huigao4; Li, Shisheng1; Han, Zheng2; Liu, Song3
Corresponding AuthorLi, Shisheng(shishengli1108@gmail.com) ; Han, Zheng(zhenghan1985@gmail.com) ; Liu, Song(liusong@hnu.edu.cn)
2020-03-18
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume12Issue:11Pages:13174-13181
AbstractGrowth of large-area, uniform, and high-quality monolayer transition-metal dichalcogenides (TMDs) for practical and industrial applications remains a long-standing challenge. The present study demonstrates a modified predeposited chemical vapor deposition (CVD) process by employing an annealing procedure before sulfurization, which helps in achieving large-area, highly uniform, and high-quality TMDs on various substrates. The annealing procedure resulted in a molten liquid state of the precursors in the CVD process, which not only facilitated a uniform redistribution of the precursor on the substrate (avoid the aggregation) because of the uniform redistribution of the liquid precursor on the substrate but more importantly avoided the undesired multilayer growth via the self-limited lateral supply precursors mechanism. A 2 in. uniform and continuous monolayer WS2 film has been synthesized on the SiO2/Si substrate. Moreover, uniform monolayer WS2 single crystals can be prepared on more general and various substrates including sapphire, mica, quartz, and Si3N4 using the same growth procedure. Besides, this growth mechanism can be generalized to synthesize other monolayer TMDs such as MoS2 and MoS2/WS2 heterostructures. Hence, the present method provides a generalized attractive strategy to grow large-area, uniform, single-layer two-dimensional (2D) materials. This study has significant implications in the advancement of batch production of various 2D-material-based devices for industrial and commercial applications.
Keywordtransition-metal dichalcogenides chemical vapor deposition large-area growth molten liquid intermediate monolayer
Funding OrganizationNational Natural Science Foundation of China ; Natural Science Foundation of Hunan Province, China ; Fundamental Research Funds for the Central Universities from Hunan University ; National Key R&D Program of China ; Nation Natural Science Foundation of China (NSFC) ; U.S. National Science Foundation CREST program
DOI10.1021/acsami.9b22397
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[21705036] ; National Natural Science Foundation of China[21975067] ; Natural Science Foundation of Hunan Province, China[2018JJ3035] ; Fundamental Research Funds for the Central Universities from Hunan University ; National Key R&D Program of China[2017YFA0206302] ; Nation Natural Science Foundation of China (NSFC)[11504385] ; Nation Natural Science Foundation of China (NSFC)[516227801] ; U.S. National Science Foundation CREST program[NSF HRD-1547723]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000526543400084
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138200
Collection中国科学院金属研究所
Corresponding AuthorLi, Shisheng; Han, Zheng; Liu, Song
Affiliation1.NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Hunan Univ, ICBN, State Key Lab Chemo Biosensing & Chemometr, Coll Chem & Chem Engn, Changsha 410082, Peoples R China
4.Hunan Univ, State Key Lab Adv Design & Mfg Vehicle Body, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
5.Natl Univ Def Technol, Sci & Technol Adv Ceram Fibers & Composites Lab, Coll Aerosp Sci & Engn, Changsha 410073, Peoples R China
6.Calif State Univ, Dept Mech Engn, Los Angeles, CA 90032 USA
Recommended Citation
GB/T 7714
Liu, Hang,Qi, Guopeng,Tang, Caisheng,et al. Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(11):13174-13181.
APA Liu, Hang.,Qi, Guopeng.,Tang, Caisheng.,Chen, Maolin.,Chen, Yang.,...&Liu, Song.(2020).Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process.ACS APPLIED MATERIALS & INTERFACES,12(11),13174-13181.
MLA Liu, Hang,et al."Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process".ACS APPLIED MATERIALS & INTERFACES 12.11(2020):13174-13181.
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