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Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering
Zhang, Xinglai1; Zhang, Jian1; Leng, Bing2; Li, Jing1; Ma, Zongyi1; Yang, Wenjin1; Liu, Fei3,4; Liu, Baodan1
Corresponding AuthorLiu, Baodan(baodanliu@imr.ac.cn)
2019-12-06
Source PublicationADVANCED MATERIALS INTERFACES
ISSN2196-7350
Volume6Issue:23Pages:8
AbstractThe piezo-phototronic effect can effectively engineer the energy band structure at the local interface of piezo-semiconductor junction, and thus improve the performance of optoelectronics. In this work, a high-performance poly(9-vinylcarbazole) (PVK)/ZnO nanorods/graphene heterostructure photodetector is designed and fabricated using a multi-step process. By introducing a -1.093% compressive strain to the hybrid heterostructure, carrier-dynamics modulation at the local junctions can be induced by the piezoelectric polarization, and the photoresponsivity and the specific detectivity of the photodetector can be enhanced approximate to 440% and approximate to 132% under UV light illumination with the peak values up to 80.6 A W-1 and 2.3 x 10(11) Jones, respectively. The photoresponse enhancement is attributed to the piezopotential generated at PVK/ZnO and ZnO/graphene interfaces, which promote the separation and transfer of photogenerated carriers. Physical working mechanism behind the observed results is discussed via energy band diagram. This work not only presents a new way to achieve the higher performance in photodetectors by fully utilizing piezo-phototronic interface engineering but also provides a deep understanding of piezo-phototronic effect on optoelectronic devices.
Keywordgraphene heterojunction photodetectors piezo-phototronic effect ZnO nanorods
Funding OrganizationNational Natural Science Foundation of China ; Shenyang Science and Technology Program ; Youth Innovation Promotion Association of the Chinese Academy of Sciences ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)
DOI10.1002/admi.201901365
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Shenyang Science and Technology Program[18-013-0-52] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019197] ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)[OEMT-2017-KF-02]
WOS Research AreaChemistry ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Materials Science, Multidisciplinary
WOS IDWOS:000527330100016
PublisherWILEY
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138241
Collection中国科学院金属研究所
Corresponding AuthorLiu, Baodan
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, Shenyang 110001, Peoples R China
3.Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
4.Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Xinglai,Zhang, Jian,Leng, Bing,et al. Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering[J]. ADVANCED MATERIALS INTERFACES,2019,6(23):8.
APA Zhang, Xinglai.,Zhang, Jian.,Leng, Bing.,Li, Jing.,Ma, Zongyi.,...&Liu, Baodan.(2019).Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering.ADVANCED MATERIALS INTERFACES,6(23),8.
MLA Zhang, Xinglai,et al."Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering".ADVANCED MATERIALS INTERFACES 6.23(2019):8.
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