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Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides
Tang, Lei1,2; Li, Tao4; Luo, Yuting1,2; Feng, Simin1,2; Cai, Zhengyang1,2; Zhang, Hang4; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3
Corresponding AuthorLiu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
2020-04-28
Source PublicationACS NANO
ISSN1936-0851
Volume14Issue:4Pages:4646-4653
AbstractTwo-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.
Keywordtwo-dimensional materials TMDCs gaseous sources VCVD uniformity heterostructures
Funding OrganizationNational Natural Science Foundation of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program
DOI10.1021/acsnano.0c00296
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51888103] ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000529895500084
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:21[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138651
Collection中国科学院金属研究所
Corresponding AuthorLiu, Bilu; Cheng, Hui-Ming
Affiliation1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Guangdong, Peoples R China
2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
4.Chinese Acad Sci, Inst Engn Thermophys, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Tang, Lei,Li, Tao,Luo, Yuting,et al. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides[J]. ACS NANO,2020,14(4):4646-4653.
APA Tang, Lei.,Li, Tao.,Luo, Yuting.,Feng, Simin.,Cai, Zhengyang.,...&Cheng, Hui-Ming.(2020).Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides.ACS NANO,14(4),4646-4653.
MLA Tang, Lei,et al."Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides".ACS NANO 14.4(2020):4646-4653.
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