| Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides | |
| Tang, Lei1,2; Li, Tao4; Luo, Yuting1,2; Feng, Simin1,2; Cai, Zhengyang1,2; Zhang, Hang4; Liu, Bilu1,2; Cheng, Hui-Ming1,2,3 | |
| Corresponding Author | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 2020-04-28 | |
| Source Publication | ACS NANO
 |
| ISSN | 1936-0851 |
| Volume | 14Issue:4Pages:4646-4653 |
| Abstract | Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures. |
| Keyword | two-dimensional materials TMDCs gaseous sources VCVD uniformity heterostructures |
| Funding Organization | National Natural Science Foundation of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program |
| DOI | 10.1021/acsnano.0c00296 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51888103] ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline ; Chinese Academy of Science Pioneer Hundred Talents Program |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000529895500084 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/138651 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Bilu; Cheng, Hui-Ming |
| Affiliation | 1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Guangdong, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Chinese Acad Sci, Inst Engn Thermophys, Beijing 100190, Peoples R China |
| Recommended Citation GB/T 7714 | Tang, Lei,Li, Tao,Luo, Yuting,et al. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides[J]. ACS NANO,2020,14(4):4646-4653. |
| APA | Tang, Lei.,Li, Tao.,Luo, Yuting.,Feng, Simin.,Cai, Zhengyang.,...&Cheng, Hui-Ming.(2020).Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides.ACS NANO,14(4),4646-4653. |
| MLA | Tang, Lei,et al."Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides".ACS NANO 14.4(2020):4646-4653. |
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