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Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls
Zhao, Xiaotian1; Ji, Lianze2; Liu, Wei1; Li, Shangkun1; Liu, Long1; Song, Yuhang1; Li, Yang1; Ma, Jun1; Sun, Xingdan1; Wang, Hanwen1; Zhao, Xinguo1; Zhang, Zhidong1
Corresponding AuthorLiu, Wei(wliu@imr.ac.cn)
2020-04-28
Source PublicationPHYSICAL REVIEW APPLIED
ISSN2331-7019
Volume13Issue:4Pages:10
AbstractThe spin-orbit-torque (SOT) device is a promising candidate for the next-generation magnetic random-access memory; however, the static in-plane field needed to induce deterministic switching is a main obstacle for its application in circuits. In this work, we employ the exchange coupling between the Co/Ni/Co trilayer and Tb/Co multilayers in a device to form the domain wall (DW), by whose current-driven propagation the field-free magnetization switching is achieved. The SOT efficiency of the device is highly dependent on the chirality of the Neel-type DW. Meanwhile, the coexistence of two switching modes results in an asymmetric switching phase diagram. We find the competition between the uniform external field and the Dzyaloshinskii-Moriya interaction induces negative feedback to the pinning effect, resulting in a sharp switching process and straight DW profile. Finally, a synthetic antiferromagnetic device is investigated by experiment and micromagnetic simulation to verify the feasibility of using this proposal as the free layer of a magnetic tunneling junction.
Funding OrganizationState Key Project of Research and Development of China ; National Nature Science Foundation of China
DOI10.1103/PhysRevApplied.13.044074
Indexed BySCI
Language英语
Funding ProjectState Key Project of Research and Development of China[2017YFA0206302] ; National Nature Science Foundation of China[51590883] ; National Nature Science Foundation of China[51771198] ; National Nature Science Foundation of China[51801212]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000529105700004
PublisherAMER PHYSICAL SOC
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138698
Collection中国科学院金属研究所
Corresponding AuthorLiu, Wei
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat MOE, Shenyang 110819, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Xiaotian,Ji, Lianze,Liu, Wei,et al. Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls[J]. PHYSICAL REVIEW APPLIED,2020,13(4):10.
APA Zhao, Xiaotian.,Ji, Lianze.,Liu, Wei.,Li, Shangkun.,Liu, Long.,...&Zhang, Zhidong.(2020).Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls.PHYSICAL REVIEW APPLIED,13(4),10.
MLA Zhao, Xiaotian,et al."Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls".PHYSICAL REVIEW APPLIED 13.4(2020):10.
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