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Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires
Wei, LingNan1,2; Wang, ZhenHua1,2; Zhang, ZhiDong1,2; Liu, Chieh-Wen3; Gao, Xuan P. A.3
Corresponding AuthorWang, ZhenHua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
2020-05-01
Source PublicationNANO RESEARCH
ISSN1998-0124
Volume13Issue:5Pages:1332-1338
AbstractWe report the composition and back-gate voltage tuned transport properties of ternary compound Bi-2(Te1-xSex)(3) nanowires synthesized by chemical vapor deposition (CVD). It is found that the population of bulk carriers can be suppressed effectively with increasing the Se concentration x. In Bi-2(Te1-xSex)(3) nanowires with x = 25% +/- 5%, the ambipolar surface conduction associated with tuning the Fermi energy across the Dirac point of topological surface states is induced by applying a back-gate voltage. Importantly, we find that while the magneto-resistance (MR) follows the weak antilocalization (WAL) behavior when the Fermi level is tuned away from the Dirac point, MR is enhanced in magnitude and turns more linear in the whole magnetic field range (between +/- 9 T) near the Dirac point. The observation of the enhanced linear magneto-resistance (LMR) and crossover from WAL to LMR, near the Dirac point provides a deeper insight into understanding the nature of topological insulator's surface transport and the relation between these two widely observed magneto-transport phenomena.
KeywordTopological insulator nanowire ambipolar conduction bismuth selenide bismuth telluride linear magneto-resistance weak anti-localization
DOI10.1007/s12274-019-2577-3
Indexed BySCI
Language英语
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000536754100013
PublisherTSINGHUA UNIV PRESS
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/138907
Collection中国科学院金属研究所
Corresponding AuthorWang, ZhenHua; Gao, Xuan P. A.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
Recommended Citation
GB/T 7714
Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,et al. Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires[J]. NANO RESEARCH,2020,13(5):1332-1338.
APA Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,Liu, Chieh-Wen,&Gao, Xuan P. A..(2020).Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires.NANO RESEARCH,13(5),1332-1338.
MLA Wei, LingNan,et al."Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires".NANO RESEARCH 13.5(2020):1332-1338.
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