Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires

doi:10.1007/s12274-019-2577-3

IMR OpenIR

	Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires
	Wei, LingNan 1,2; Wang, ZhenHua 1,2; Zhang, ZhiDong 1,2; Liu, Chieh-Wen 3; Gao, Xuan P. A.3
通讯作者	Wang, ZhenHua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
	2020-05-01
发表期刊	NANO RESEARCH
ISSN	1998-0124
卷号	13 期号:5 页码:1332-1338
摘要	We report the composition and back-gate voltage tuned transport properties of ternary compound Bi-2(Te1-xSex)(3) nanowires synthesized by chemical vapor deposition (CVD). It is found that the population of bulk carriers can be suppressed effectively with increasing the Se concentration x. In Bi-2(Te1-xSex)(3) nanowires with x = 25% +/- 5%, the ambipolar surface conduction associated with tuning the Fermi energy across the Dirac point of topological surface states is induced by applying a back-gate voltage. Importantly, we find that while the magneto-resistance (MR) follows the weak antilocalization (WAL) behavior when the Fermi level is tuned away from the Dirac point, MR is enhanced in magnitude and turns more linear in the whole magnetic field range (between +/- 9 T) near the Dirac point. The observation of the enhanced linear magneto-resistance (LMR) and crossover from WAL to LMR, near the Dirac point provides a deeper insight into understanding the nature of topological insulator's surface transport and the relation between these two widely observed magneto-transport phenomena.
关键词	Topological insulator nanowire ambipolar conduction bismuth selenide bismuth telluride linear magneto-resistance weak anti-localization
DOI	10.1007/s12274-019-2577-3
收录类别	SCI
语种	英语
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000536754100013
出版者	TSINGHUA UNIV PRESS
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/138907
专题	中国科学院金属研究所
通讯作者	Wang, ZhenHua; Gao, Xuan P. A.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,et al. Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires[J]. NANO RESEARCH,2020,13(5):1332-1338.
APA	Wei, LingNan,Wang, ZhenHua,Zhang, ZhiDong,Liu, Chieh-Wen,&Gao, Xuan P. A..(2020).Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires.NANO RESEARCH,13(5),1332-1338.
MLA	Wei, LingNan,et al."Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi-2(Te1-xSex)(3) nanowires".NANO RESEARCH 13.5(2020):1332-1338.