| Two-stage Hall-Petch relationship in Cu with recrystallized structure | |
| Tian, Y. Z.1; Ren, Y. P.2; Gao, S.3,4; Zheng, R. X.5; Wang, J. H.6; Pan, H. C.1; Zhang, Z. F.7,8; Tsuji, N.3,4; Qin, G. W.2 | |
| Corresponding Author | Tian, Y. Z.(tianyanzhong@mail.neu.edu.cn) |
| 2020-07-01 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| ISSN | 1005-0302 |
| Volume | 48Pages:31-35 |
| Abstract | Although Cu was studied extensively, the Hall-Petch relationship was mainly reported in the coarse-grained regime. In this work, fully recrystallized Cu specimens with a wide grain size regime of 0.51-14.93 mu m manifest a two-stage Hall-Petch relationship. There is a critical grain size of 3 mu m that divides stages I and II where the Hall-Petch slope k value are quite different. The stage II is supposed to be validified down to 100 nm at least by comparing with a Cu-Ag alloy. The critical grain size varies in different materials systems, and the underline mechanisms are discussed based on the dislocation glide modes. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| Keyword | Cu Yield strength Hall-Petch relationship Ultrafine grain Recrystallization |
| Funding Organization | Fundamental Research Funds for the Central Universities ; Chinese Academy of Sciences (CAS) ; Japan Society for the Promotion of Science (JSPS) ; Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through the Elements Strategy Initiative for Structural Materials (ESISM) ; Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan |
| DOI | 10.1016/j.jmst.2019.12.023 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Fundamental Research Funds for the Central Universities[N180204015] ; Chinese Academy of Sciences (CAS)[GJHZ1774] ; Japan Society for the Promotion of Science (JSPS)[GJHZ1774] ; Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through the Elements Strategy Initiative for Structural Materials (ESISM) ; Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan[15H05767] |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000534323200005 |
| Publisher | JOURNAL MATER SCI TECHNOL |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/138940 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Tian, Y. Z. |
| Affiliation | 1.Northeastern Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Anisotropy & Texture Mat, Shenyang 110819, Peoples R China 2.Northeastern Univ, State Key Lab Rolling & Automat, Shenyang 110819, Peoples R China 3.Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan 4.Kyoto Univ, Elements Strategy Initiat Struct Mat ESISM, Sakyo Ku, Kyoto 6068501, Japan 5.Beihang Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Aerosp Adv Mat & Performance, Beijing 100191, Peoples R China 6.State Grid Urban & Rural Elect Power Design Res B, Beijing 100078, Peoples R China 7.Chinese Acad Sci, Inst Met Res, Lab Fatigue & Fracture Mat, Shenyang 110016, Peoples R China 8.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China |
| Recommended Citation GB/T 7714 | Tian, Y. Z.,Ren, Y. P.,Gao, S.,et al. Two-stage Hall-Petch relationship in Cu with recrystallized structure[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,48:31-35. |
| APA | Tian, Y. Z..,Ren, Y. P..,Gao, S..,Zheng, R. X..,Wang, J. H..,...&Qin, G. W..(2020).Two-stage Hall-Petch relationship in Cu with recrystallized structure.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,48,31-35. |
| MLA | Tian, Y. Z.,et al."Two-stage Hall-Petch relationship in Cu with recrystallized structure".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 48(2020):31-35. |
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