Creep behavior and a deformation mechanism based creep rate model under high temperature and low stress condition for single crystal superalloy DD5 | |
Xu, Ke1,2; Wang, Guanglei2; Liu, Jide2; Li, Jinguo2; Liu, Jinlai2; Wang, Xinguang2; Yang, Yanhong2; Ye, Lihua2; Zhou, Yizhou2; Sun, Xiaofeng2 | |
通讯作者 | Liu, Jide(jdliu@imr.ac.cn) |
2020-06-01 | |
发表期刊 | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
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ISSN | 0921-5093 |
卷号 | 786页码:10 |
摘要 | This work reports the investigation on creep behavior under high temperature and low stress condition for single crystal superalloy DD5 and the subsequent establishment of a deformation mechanism based creep rate model. The gamma/gamma' microstructure evolution and the precipitate-dislocation interaction mode were investigated systematically during creep test at 1100 degrees C and 120 MPa, for a better understanding of underlying creep deformation characteristics. The gamma/gamma' microstructure becomes rafted and topological inverted eventually as creep deformation continues. The formation of dense interfacial dislocation network that impedes dislocations from cutting into gamma' precipitates is assumed to be one of the main strengthening mechanisms during creep. The climbing over rafted gamma' precipitates is seen as a recovery/softening process which annihilates dislocations, receding the strengthening effect of interfacial dislocation network. The cutting through rafted gamma' precipitates is proposed to account for the acceleration of creep, a strong dependence of creep properties on rafting (the effect of widening horizontal. channel on the degraded back stress of cutting through rafted gamma' precipitates) then arises. The established model involving these characteristics was found to predict the creep behavior (below 1% creep strain) under different temperatures and stresses for single crystal superalloy DD5 accurately. Several microstructure characteristics and physical properties emerge from the model, which is promising for alloy design and compositional optimization. |
关键词 | Nickel based single crystal superalloys Creep behavior Microstructure Creep model |
资助者 | National Natural Science Foundation of China ; National Key Research and Development Program of China ; National Science and Technology Major Project |
DOI | 10.1016/j.msea.2020.139414 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[51871221] ; National Key Research and Development Program of China[2017YFA0700704] ; National Science and Technology Major Project[2017-VI-0002-0072] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
WOS记录号 | WOS:000541737900018 |
出版者 | ELSEVIER SCIENCE SA |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/139469 |
专题 | 中国科学院金属研究所 |
通讯作者 | Liu, Jide |
作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, Ke,Wang, Guanglei,Liu, Jide,et al. Creep behavior and a deformation mechanism based creep rate model under high temperature and low stress condition for single crystal superalloy DD5[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,2020,786:10. |
APA | Xu, Ke.,Wang, Guanglei.,Liu, Jide.,Li, Jinguo.,Liu, Jinlai.,...&Sun, Xiaofeng.(2020).Creep behavior and a deformation mechanism based creep rate model under high temperature and low stress condition for single crystal superalloy DD5.MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,786,10. |
MLA | Xu, Ke,et al."Creep behavior and a deformation mechanism based creep rate model under high temperature and low stress condition for single crystal superalloy DD5".MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 786(2020):10. |
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