The effect of finish layer on the interfacial cracking failure of Au-Si bonding
Gao, Li-Yin1,2; Wen, Jian2,3; Li, Cai-Fu2,4; Chen, Chunhuan3; Liu, Zhi-Quan1,2
Corresponding AuthorLiu, Zhi-Quan(
AbstractThe interfacial reliability of Au-Si bonding between Cu/MoCu/Cu (named as CPC) substrate and silicon chip is analyzed. The results of optical microscopy (OM) and conformal laser scanning microscopy (CLSM) revealed that the Au layer of the cracked sample has small roughness without any patterns on it. Furthermore, the results of scanning electron microscopy (SEM), electron back-scattered diffraction (EBSD) and electron probe micro-analysis (EPMA) demonstrated that the void or crack initiated at the interface between a thin intermetallic compound (IMC) layer and the NiCo layer. It showed that the cracked sample had higher Ni content within NiCo layer and smaller size of Au layer. Moreover, the IMCs were characterized using transmission electron microscopy (TEM), which were identified as bulk-like dispersed NiSi2 and a thin continuous (Ni,Co)(2)Si layer. Based on the experimental results, the failure mechanism of Au-Si bonding is concluded coming from the unbalanced diffusion rate between Ni and Si during interfacial re-action. Higher Ni content of NiCo layer and small grain size of Au and (Ni,Co)(2)Si layer accelerate the diffusion of Ni, which also promotes the growth of interfacial Ni-contained IMC. As a result, the vacancy flows diffuse inversely towards the interface and form voids along the interface, which leads to the final crack failure.
KeywordAuSi bonding NiCo Intermetallic compounds (IMCs) Failure analysis Crack
Funding OrganizationNational Key R&D Program of China
Indexed BySCI
Funding ProjectNational Key R&D Program of China[2017YFB0305700]
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Mechanical ; Materials Science, Characterization & Testing
WOS IDWOS:000554882700004
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorLiu, Zhi-Quan
Affiliation1.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
3.Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
4.Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China
Recommended Citation
GB/T 7714
Gao, Li-Yin,Wen, Jian,Li, Cai-Fu,et al. The effect of finish layer on the interfacial cracking failure of Au-Si bonding[J]. ENGINEERING FAILURE ANALYSIS,2020,115:8.
APA Gao, Li-Yin,Wen, Jian,Li, Cai-Fu,Chen, Chunhuan,&Liu, Zhi-Quan.(2020).The effect of finish layer on the interfacial cracking failure of Au-Si bonding.ENGINEERING FAILURE ANALYSIS,115,8.
MLA Gao, Li-Yin,et al."The effect of finish layer on the interfacial cracking failure of Au-Si bonding".ENGINEERING FAILURE ANALYSIS 115(2020):8.
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