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Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
Hong, Yi-Lun1,2; Liu, Zhibo1; Wang, Lei1,2; Zhou, Tianya1,2; Ma, Wei1,2; Xu, Chuan1; Feng, Shun1,3; Chen, Long1; Chen, Mao-Lin1,2; Sun, Dong-Ming1,2; Chen, Xing-Qiu1,2; Cheng, Hui-Ming1,2,4,5; Ren, Wencai1,2
Corresponding AuthorRen, Wencai(wcren@limr.ac.cn)
2020-08-07
Source PublicationSCIENCE
ISSN0036-8075
Volume369Issue:6504Pages:670-+
AbstractIdentifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
Funding OrganizationNational Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Key R&D Program of the Ministry of Science and Technology of China ; LiaoNing Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality
DOI10.1126/science.abb7023
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51725103] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51671193] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; National Key R&D Program of the Ministry of Science and Technology of China[2016YFA0200101] ; LiaoNing Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000559184400041
PublisherAMER ASSOC ADVANCEMENT SCIENCE
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/140178
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
5.Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
Recommended Citation
GB/T 7714
Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+.
APA Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+.
MLA Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+.
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