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Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure
Gao, Li-Yin1,2; Cui, Xian-Wei3; Tian, Fei-Fei4; Liu, Zhi-Quan1,2
Corresponding AuthorLiu, Zhi-Quan(zqliu@siat.ac.cn)
2020-08-13
Source PublicationJOURNAL OF ELECTRONIC MATERIALS
ISSN0361-5235
Pages9
AbstractIn this study, the influence of different reflow profiles and dosages of SnPb solder paste on the reliability of the SnAgCu/SnPb mixed assembly process was investigated. The interfacial microstructures were carefully examined through scanning electron microscopy, and two failures modes were found. Firstly, when reflowed at 245 degrees C for 95 s, Pb-rich phases were buried within an intermetallic compound (IMC) layer and led to micro-voids and cracks under thermal stress or mechanical stress. However, upon increasing the reflow temperature or time further led to melting the solder ball totally, and the Pb element dissolved into a liquid phase and precipitated into uniform and small granules during the cooling process. Further, among the samples with different dosages of SnPb solder paste, severe shrinkage occurred at the solder joints with the addition of 12 wt.% eutectic SnPb component. Electron back-scattered diffraction analysis was conducted in order to determine the mechanism of different shrinkages. The solder ball consisted of several primary Sn grains, and the shrinkage and Pb-rich phase are preferred to appear at the grain boundary. When the solder ball consisted of a single grain, no preferred orientation of the shrinkage and Pb-rich phase were detected. The shrinkage appeared at the final solidification region, which is near the IMC layer. Moreover, the shrinkages connect to each other, and a continuous crack formed on the chip side, leading to the failure.
KeywordMixed soldering ball grid array solidification crack shrinkage failure mechanism
Funding OrganizationNaUNCORRECTED tional Key R&D Program of China
DOI10.1007/s11664-020-08372-8
Indexed BySCI
Language英语
Funding ProjectNaUNCORRECTED tional Key R&D Program of China[2017YFB0305700]
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000559506500003
PublisherSPRINGER
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/140223
Collection中国科学院金属研究所
Corresponding AuthorLiu, Zhi-Quan
Affiliation1.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
3.Jiangyin Changdian Adv Packaging Co Ltd, Jiangyin 214431, Peoples R China
4.Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China
Recommended Citation
GB/T 7714
Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,et al. Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure[J]. JOURNAL OF ELECTRONIC MATERIALS,2020:9.
APA Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,&Liu, Zhi-Quan.(2020).Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure.JOURNAL OF ELECTRONIC MATERIALS,9.
MLA Gao, Li-Yin,et al."Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure".JOURNAL OF ELECTRONIC MATERIALS (2020):9.
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