Pushing the conductance and transparency limit of monolayer graphene electrodes for flexible organic light-emitting diodes | |
Ma, Lai-Peng1,2; Wu, Zhongbin3; Yin, Lichang1,2; Zhang, Dingdong1,2; Dong, Shichao1,2; Zhang, Qing1,2; Chen, Mao-Lin1,2; Ma, Wei1,2; Zhang, Zhibin4; Du, Jinhong1,2; Sun, Dong-Ming1,2; Liu, Kaihui4; Duan, Xiangfeng5; Ma, Dongge6; Cheng, Hui-Ming1,2,7; Ren, Wencai1,2 | |
通讯作者 | Ren, Wencai(wcren@imr.ac.cn) |
2020-10-20 | |
发表期刊 | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
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ISSN | 0027-8424 |
卷号 | 117期号:42页码:25991-25998 |
摘要 | Graphene has emerged as an attractive candidate for flexible transparent electrode (FTE) for a new generation of flexible optoelectronics. Despite tremendous potential and broad earlier interest, the promise of graphene FTE has been plagued by the intrinsic trade-off between electrical conductance and transparency with a figure of merit (sigma(DC)/sigma(Op)) considerably lower than that of the state-of-the-art ITO electrodes (sigma(DC)/sigma(Op) <123 for graphene vs. similar to 240 for ITO). Here we report a synergistic electrical/optical modulation strategy to simultaneously boost the conductance and transparency. We show that a tetrakis(pentafluorophenyl)boric acid (HTB) coating can function as highly effective hole doping layer to increase the conductance of monolayer graphene by sevenfold and at the same time as an antireflective layer to boost the visible transmittance to 98.8%. Such simultaneous improvement in conductance and transparency breaks previous limit in graphene FTEs and yields an unprecedented figure of merit (sigma(DC)/sigma(Op) similar to 323) that rivals the best commercial ITO electrode. Using the tailored monolayer graphene as the flexible anode, we further demonstrate high-performance green organic light-emitting diodes (OLEDs) with the maximum current, power and external quantum efficiencies (111.4 cd A(-1), 124.9 lm W-1 and 29.7%) outperforming all comparable flexible OLEDs and surpassing that with standard rigid ITO by 43%. This study defines a straight-forward pathway to tailor optoelectronic properties of monolayer graphene and to fully capture their potential as a generational FTE for flexible optoelectronics. |
关键词 | flexible optoelectronics graphene transparent electrode doping antireflection |
资助者 | Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality for the development of the LowDimensional Materials and Devices discipline |
DOI | 10.1073/pnas.1922521117 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51861135201] ; Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Chinese Academy of Sciences[XDB30000000] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Liaoning Revitalization Talents Program[XLYC1808013] ; Program for Guangdong Introducing Innovative and Entrepreneurial Teams ; Development and Reform Commission of Shenzhen Municipality for the development of the LowDimensional Materials and Devices discipline |
WOS研究方向 | Science & Technology - Other Topics |
WOS类目 | Multidisciplinary Sciences |
WOS记录号 | WOS:000580597300012 |
出版者 | NATL ACAD SCIENCES |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/140940 |
专题 | 中国科学院金属研究所 |
通讯作者 | Ren, Wencai |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymers Phys & Chem, Changchun 130022, Peoples R China 4.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 5.Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA 6.South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China 7.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Ma, Lai-Peng,Wu, Zhongbin,Yin, Lichang,et al. Pushing the conductance and transparency limit of monolayer graphene electrodes for flexible organic light-emitting diodes[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2020,117(42):25991-25998. |
APA | Ma, Lai-Peng.,Wu, Zhongbin.,Yin, Lichang.,Zhang, Dingdong.,Dong, Shichao.,...&Ren, Wencai.(2020).Pushing the conductance and transparency limit of monolayer graphene electrodes for flexible organic light-emitting diodes.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,117(42),25991-25998. |
MLA | Ma, Lai-Peng,et al."Pushing the conductance and transparency limit of monolayer graphene electrodes for flexible organic light-emitting diodes".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 117.42(2020):25991-25998. |
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