| The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering | |
| Liu, Zhi-Quan1,2,3; Meng, Zhi-Chao1,2; Wu, Di1; Shang, Zhengang4; He, Xin5; Xiong, Xiaodong5 | |
| Corresponding Author | Liu, Zhi-Quan(zqliu@siat.ac.an) |
| 2020-10-01 | |
| Source Publication | MICROELECTRONICS RELIABILITY
 |
| ISSN | 0026-2714 |
| Volume | 113Pages:6 |
| Abstract | Large target is essential for the fabrication of semiconductor devices, and the reliability of sputtering target backplate assembly plays a key role on the quality of sputtered films in the devices. In this work, the interface of an 8-inch Co target soldered on Cu backplate by In alloy is studied and characterized systematically. At the Cu backplate side, there are many void defects, and only one kind of intermetallic compound (IMC), namely Cu11In9, was observed after soldering. This Cu11In9 layer consists of two sublayers, which were formed at different reaction stage during soldering. At the Co target side, the voids are small, and the formed IMC is Ni28In72 phase. There is a thin Ni(V) layer at the Co side, and the V element is concentrated and stable at the interface, while Co will diffuse into Ni(V) layer to form a solid solution. The interfacial reaction and IMC formation related mechanisms are discussed, which can provide guidance for the design and fabrication of large-scale sputtering target assembly in microelectronic industry. |
| Keyword | Co sputtering target Soldering assembly Interface IMC Growth mechanism |
| Funding Organization | National Key Research and Development Program of China |
| DOI | 10.1016/j.microrel.2020.113906 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[2017YFB0305501] |
| WOS Research Area | Engineering ; Science & Technology - Other Topics ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| WOS ID | WOS:000579082400008 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/141051 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Zhi-Quan |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 4.Cent South Univ, Adv Res Ctr, Changsha 410083, Peoples R China 5.GRIKIN Adv Mat Co Ltd, Beijing 102200, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,et al. The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering[J]. MICROELECTRONICS RELIABILITY,2020,113:6. |
| APA | Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,Shang, Zhengang,He, Xin,&Xiong, Xiaodong.(2020).The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering.MICROELECTRONICS RELIABILITY,113,6. |
| MLA | Liu, Zhi-Quan,et al."The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering".MICROELECTRONICS RELIABILITY 113(2020):6. |
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