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The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering
Liu, Zhi-Quan1,2,3; Meng, Zhi-Chao1,2; Wu, Di1; Shang, Zhengang4; He, Xin5; Xiong, Xiaodong5
Corresponding AuthorLiu, Zhi-Quan(zqliu@siat.ac.an)
2020-10-01
Source PublicationMICROELECTRONICS RELIABILITY
ISSN0026-2714
Volume113Pages:6
AbstractLarge target is essential for the fabrication of semiconductor devices, and the reliability of sputtering target backplate assembly plays a key role on the quality of sputtered films in the devices. In this work, the interface of an 8-inch Co target soldered on Cu backplate by In alloy is studied and characterized systematically. At the Cu backplate side, there are many void defects, and only one kind of intermetallic compound (IMC), namely Cu11In9, was observed after soldering. This Cu11In9 layer consists of two sublayers, which were formed at different reaction stage during soldering. At the Co target side, the voids are small, and the formed IMC is Ni28In72 phase. There is a thin Ni(V) layer at the Co side, and the V element is concentrated and stable at the interface, while Co will diffuse into Ni(V) layer to form a solid solution. The interfacial reaction and IMC formation related mechanisms are discussed, which can provide guidance for the design and fabrication of large-scale sputtering target assembly in microelectronic industry.
KeywordCo sputtering target Soldering assembly Interface IMC Growth mechanism
Funding OrganizationNational Key Research and Development Program of China
DOI10.1016/j.microrel.2020.113906
Indexed BySCI
Language英语
Funding ProjectNational Key Research and Development Program of China[2017YFB0305501]
WOS Research AreaEngineering ; Science & Technology - Other Topics ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS IDWOS:000579082400008
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/141051
Collection中国科学院金属研究所
Corresponding AuthorLiu, Zhi-Quan
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
4.Cent South Univ, Adv Res Ctr, Changsha 410083, Peoples R China
5.GRIKIN Adv Mat Co Ltd, Beijing 102200, Peoples R China
Recommended Citation
GB/T 7714
Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,et al. The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering[J]. MICROELECTRONICS RELIABILITY,2020,113:6.
APA Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,Shang, Zhengang,He, Xin,&Xiong, Xiaodong.(2020).The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering.MICROELECTRONICS RELIABILITY,113,6.
MLA Liu, Zhi-Quan,et al."The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering".MICROELECTRONICS RELIABILITY 113(2020):6.
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