The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering

doi:10.1016/j.microrel.2020.113906

IMR OpenIR

	The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering
	Liu, Zhi-Quan 1,2,3; Meng, Zhi-Chao 1,2; Wu, Di 1; Shang, Zhengang 4; He, Xin 5; Xiong, Xiaodong 5
通讯作者	Liu, Zhi-Quan(zqliu@siat.ac.an)
	2020-10-01
发表期刊	MICROELECTRONICS RELIABILITY
ISSN	0026-2714
卷号	113 页码:6
摘要	Large target is essential for the fabrication of semiconductor devices, and the reliability of sputtering target backplate assembly plays a key role on the quality of sputtered films in the devices. In this work, the interface of an 8-inch Co target soldered on Cu backplate by In alloy is studied and characterized systematically. At the Cu backplate side, there are many void defects, and only one kind of intermetallic compound (IMC), namely Cu11In9, was observed after soldering. This Cu11In9 layer consists of two sublayers, which were formed at different reaction stage during soldering. At the Co target side, the voids are small, and the formed IMC is Ni28In72 phase. There is a thin Ni(V) layer at the Co side, and the V element is concentrated and stable at the interface, while Co will diffuse into Ni(V) layer to form a solid solution. The interfacial reaction and IMC formation related mechanisms are discussed, which can provide guidance for the design and fabrication of large-scale sputtering target assembly in microelectronic industry.
关键词	Co sputtering target Soldering assembly Interface IMC Growth mechanism
资助者	National Key Research and Development Program of China
DOI	10.1016/j.microrel.2020.113906
收录类别	SCI
语种	英语
资助项目	National Key Research and Development Program of China[2017YFB0305501]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号	WOS:000579082400008
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/141051
专题	中国科学院金属研究所
通讯作者	Liu, Zhi-Quan
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 4.Cent South Univ, Adv Res Ctr, Changsha 410083, Peoples R China 5.GRIKIN Adv Mat Co Ltd, Beijing 102200, Peoples R China
推荐引用方式 GB/T 7714	Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,et al. The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering[J]. MICROELECTRONICS RELIABILITY,2020,113:6.
APA	Liu, Zhi-Quan,Meng, Zhi-Chao,Wu, Di,Shang, Zhengang,He, Xin,&Xiong, Xiaodong.(2020).The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering.MICROELECTRONICS RELIABILITY,113,6.
MLA	Liu, Zhi-Quan,et al."The interfacial reaction and microstructure of Co/In/Cu sputtering target assembly after soldering".MICROELECTRONICS RELIABILITY 113(2020):6.