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Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
Tang, Lei1,2; Xu, Runzhang1,2; Tan, Junyang1,2; Luo, Yuting1,2; Zou, Jingyun1,2; Zhang, Zongteng3; Zhang, Rongjie1,2; Zhao, Yue3; Lin, Junhao3; Zou, Xiaolong1,2; Liu, Bilu1,2; Cheng, Hui-Ming1,2,4
Corresponding AuthorLiu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
2020-10-27
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Pages7
AbstractModulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications, and doping is an effective way toward this goal, yet is challenging to control. Here, the in situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapor deposition is reported. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range of 1.98-1.65 eV. Noteworthy, electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n- to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.
Keyword2D materials bandgap doping electronic structure TMDCs
Funding OrganizationNational Natural Science Foundation of China ; Youth 1000-Talent Program of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project
DOI10.1002/adfm.202006941
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000583866700001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/141192
Collection中国科学院金属研究所
Corresponding AuthorLiu, Bilu; Cheng, Hui-Ming
Affiliation1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Tang, Lei,Xu, Runzhang,Tan, Junyang,et al. Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping[J]. ADVANCED FUNCTIONAL MATERIALS,2020:7.
APA Tang, Lei.,Xu, Runzhang.,Tan, Junyang.,Luo, Yuting.,Zou, Jingyun.,...&Cheng, Hui-Ming.(2020).Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping.ADVANCED FUNCTIONAL MATERIALS,7.
MLA Tang, Lei,et al."Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping".ADVANCED FUNCTIONAL MATERIALS (2020):7.
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