Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping

doi:10.1002/adfm.202006941

IMR OpenIR

	Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping
	Tang, Lei 1,2; Xu, Runzhang 1,2; Tan, Junyang 1,2; Luo, Yuting 1,2; Zou, Jingyun 1,2; Zhang, Zongteng 3; Zhang, Rongjie 1,2; Zhao, Yue 3; Lin, Junhao 3; Zou, Xiaolong 1,2; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,4
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
	2020-10-27
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
页码	7
摘要	Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications, and doping is an effective way toward this goal, yet is challenging to control. Here, the in situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapor deposition is reported. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range of 1.98-1.65 eV. Noteworthy, electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n- to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.
关键词	2D materials bandgap doping electronic structure TMDCs
资助者	National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project
DOI	10.1002/adfm.202006941
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; Youth 1000-Talent Program of China ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000583866700001
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：76[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/141192
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Tang, Lei,Xu, Runzhang,Tan, Junyang,et al. Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping[J]. ADVANCED FUNCTIONAL MATERIALS,2020:7.
APA	Tang, Lei.,Xu, Runzhang.,Tan, Junyang.,Luo, Yuting.,Zou, Jingyun.,...&Cheng, Hui-Ming.(2020).Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping.ADVANCED FUNCTIONAL MATERIALS,7.
MLA	Tang, Lei,et al."Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping".ADVANCED FUNCTIONAL MATERIALS (2020):7.