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Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters
Alternative TitleCharacteristics of the Structure and Properties of ZnSnO_3 Films by Varying the Magnetron Sputtering Parameters
Wu FaYu1; Li JianWei1; Qi Yi2; Ding WuTong3; Guo YuanYuan1; Zhou YanWen1
2016
Source PublicationACTA METALLURGICA SINICA-ENGLISH LETTERS
ISSN1006-7191
Volume29Issue:9Pages:827-833
AbstractTransparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV-Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target substrate separation. The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO3 films was in the range of 10(-3)-10(-4) Omega cm. The structural, optical, and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.
Other AbstractTransparent conductive oxide ZnSnO_3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV–Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target–substrate separation. The average transmittance of the ZnSnO_3 films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO_3 films was in the range of 10~(-3)–10~(-4) ? cm. The structural, optical, and electrical properties of the ZnSnO_3 films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.
KeywordCONDUCTIVE OXIDE-FILMS THIN-FILMS TRANSPARENT ZnSnO3 film Powder target Magnetron sputtering Optical property Electrical property
Indexed ByCSCD
Language英语
Funding Project[National Natural Science Foundation of China] ; [Foundation of Educational Department of Liaoning] ; [Open Subject of Key Laboratory Liaoning Province]
CSCD IDCSCD:5804835
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/142322
Collection中国科学院金属研究所
Affiliation1.Univ Sci & Technol Liaoning, Sch Met & Materials, Laser Adv Mfg Technol Ctr, Anshan 114051, Peoples R China
2.SINOTRUK Hong Kong Ltd, Jinan Casting & Forging Ctr, Zhangqiu 250200, Peoples R China
3.中国科学院金属研究所
Recommended Citation
GB/T 7714
Wu FaYu,Li JianWei,Qi Yi,et al. Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters[J]. ACTA METALLURGICA SINICA-ENGLISH LETTERS,2016,29(9):827-833.
APA Wu FaYu,Li JianWei,Qi Yi,Ding WuTong,Guo YuanYuan,&Zhou YanWen.(2016).Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters.ACTA METALLURGICA SINICA-ENGLISH LETTERS,29(9),827-833.
MLA Wu FaYu,et al."Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters".ACTA METALLURGICA SINICA-ENGLISH LETTERS 29.9(2016):827-833.
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