纳米非晶Si3N4粉的超高压低温烧结

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	纳米非晶Si3N4粉的超高压低温烧结
	李亚利; 梁勇; 佟百运; 郑丰; 马贤峰; 崔硕景; 赵伟
	1997
Source Publication	材料研究学报
ISSN	1005-3093
Volume	11.0 Issue:005 Pages:473-478
Abstract	用六面顶超高压在１．０－５．０ＧＰａ，２５－１５００℃条件下烧结激光法制备的纳米非晶Ｓｉ３Ｎ４粉，有“冷烧结”特性。表现为：在５ＧＰａ，室温下压制的块体密度达理论值的９３％，这是高压下纳米粒子产生流变的结果。
Keyword	纳米材料陶瓷材料非晶烧结激光法
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:360949
Citation statistics	Cited Times:7[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/144689
Collection	中国科学院金属研究所
Affiliation	中国科学院金属研究所
Recommended Citation GB/T 7714	李亚利,梁勇,佟百运,等. 纳米非晶Si3N4粉的超高压低温烧结[J]. 材料研究学报,1997,11.0(005):473-478.
APA	李亚利.,梁勇.,佟百运.,郑丰.,马贤峰.,...&赵伟.(1997).纳米非晶Si3N4粉的超高压低温烧结.材料研究学报,11.0(005),473-478.
MLA	李亚利,et al."纳米非晶Si3N4粉的超高压低温烧结".材料研究学报 11.0.005(1997):473-478.

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