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Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors
Alternative TitleBuildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors
Wang Dongxing1; Li Da2; Muhammad Javid1; Zhou Yuanliang1; Zhang Xuefeng3; Wang Ziming1; Lu Shanshan1; Dong Xinglong1; Zhang Zhidong2
2018
Source PublicationSCIENCE CHINA-MATERIALS
ISSN2095-8226
Volume61Issue:12Pages:1605-1613
AbstractMonocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes (Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40-90 nm in diameter and 400-500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I-V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping lnR(T)proportional to T-1/4 model above the superconducting critical temperature of 3.69 K, with semiconductor-superconductor transition (SST). Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
Other AbstractMonocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs),were fabricated by a facile arc-discharge plasma process,using bulk Sn as the raw target and methane as the gaseous carbon source.The typical Sn@CNT NRs are 40-90 nm in diameter and 400-500 nm in length.The CNTs protect the inner Sn nanorods from oxidation.Temperature dependent I-V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping lnR(T)∞T~(-1/4) model above the superconducting critical temperature of 3.69 K,with semiconductor-superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
KeywordMULTIWALLED CARBON NANOTUBES QUANTUM PHASE-TRANSITIONS SUPERCONDUCTIVITY NANOWIRES GRAPHENE OSCILLATIONS DESTRUCTION COMPOSITES CONDUCTION carbon nanotubes nanocomposite dielectric variable range hopping Josephson junction
Indexed ByCSCD
Language英语
Funding Project[National Natural Science Foundation of China]
CSCD IDCSCD:6384553
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/146730
Collection中国科学院金属研究所
Affiliation1.大连理工大学
2.中国科学院
3.中国科学院金属研究所
Recommended Citation
GB/T 7714
Wang Dongxing,Li Da,Muhammad Javid,et al. Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors[J]. SCIENCE CHINA-MATERIALS,2018,61(12):1605-1613.
APA Wang Dongxing.,Li Da.,Muhammad Javid.,Zhou Yuanliang.,Zhang Xuefeng.,...&Zhang Zhidong.(2018).Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors.SCIENCE CHINA-MATERIALS,61(12),1605-1613.
MLA Wang Dongxing,et al."Buildup of Sn@CNT nanorods by in-situ thermal plasma and the electronic transport behaviors".SCIENCE CHINA-MATERIALS 61.12(2018):1605-1613.
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