Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD

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	Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD
其他题名	Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD
	Qin Fuwen 1; Zhang Dong 1; Bai Yizhen 1; Ju Zhenhe 3; Li Shuangmei 3; Li Yucai 3; Pang Jiaqi 1; Bian Jiming 1
	2012
发表期刊	RARE METALS
ISSN	1001-0521
卷号	31 期号:2 页码:150-153
摘要	InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.
其他摘要	InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N_2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min~(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.
关键词	MOLECULAR-BEAM EPITAXY GROWTH InN films ECR-PEMOCVD sapphire substrates semiconductor devices
收录类别	CSCD
语种	英语
资助项目	[National Natural Science Foundation of China] ; [Fundamental Research Funds for the Central Universities] ; [Science and Technology Foundation for Higher Education of Liaoning Province, China] ; [Science and Technology Innovation Project Foundation for Higher Education School]
CSCD记录号	CSCD:4493794
引用统计	被引频次：5[CSCD] [CSCD记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/147897
专题	中国科学院金属研究所
作者单位	1.大连大学 2.大连理工大学 3.中国科学院金属研究所
推荐引用方式 GB/T 7714	Qin Fuwen,Zhang Dong,Bai Yizhen,et al. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD[J]. RARE METALS,2012,31(2):150-153.
APA	Qin Fuwen.,Zhang Dong.,Bai Yizhen.,Ju Zhenhe.,Li Shuangmei.,...&Bian Jiming.(2012).Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD.RARE METALS,31(2),150-153.
MLA	Qin Fuwen,et al."Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD".RARE METALS 31.2(2012):150-153.