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Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy
Alternative TitleAPPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF Bi-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY
Zhang Bingsen1; Yu Xiaoming1; Sun Xiaguang1; Li Maolin1; Zhang Caibei1; Qi Yang1
2008
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume44Issue:6Pages:647-651
AbstractUsing the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy (MBE) to prepare Bi-based oxide thin films. The concentration (molar fraction) of ozone reached above 95% when the silica gel was kept at about -85 degrees C for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3x 10(3) Pa. X-ray diffraction (XRD) demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high quality Bi(2)Sr(2)CuO(6+x) and Bi(2)Sr(2)CaCu(2)O(8+x) thin films on the MgO (100) substrates by MBE.
KeywordGROWTH DEPOSITION GENERATOR PRESSURE INSITU LAYER ozone concentrating apparatus Bi-based oxide thin film molecular beam epitaxy (MBE)
Indexed ByCSCD
Language英语
CSCD IDCSCD:3323936
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/147959
Collection中国科学院金属研究所
Affiliation1.中国科学院金属研究所
2.上海市地震局
Recommended Citation
GB/T 7714
Zhang Bingsen,Yu Xiaoming,Sun Xiaguang,et al. Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy[J]. ACTA METALLURGICA SINICA,2008,44(6):647-651.
APA Zhang Bingsen,Yu Xiaoming,Sun Xiaguang,Li Maolin,Zhang Caibei,&Qi Yang.(2008).Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy.ACTA METALLURGICA SINICA,44(6),647-651.
MLA Zhang Bingsen,et al."Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy".ACTA METALLURGICA SINICA 44.6(2008):647-651.
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