Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy

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	Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy
其他题名	APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF Bi-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY
	Zhang Bingsen 1; Yu Xiaoming 1; Sun Xiaguang 1; Li Maolin 1; Zhang Caibei 1; Qi Yang 1
	2008
发表期刊	ACTA METALLURGICA SINICA
ISSN	0412-1961
卷号	44 期号:6 页码:647-651
摘要	Using the principle of silica gel adsorbed-desorbed ozone, a homemade ozone concentrating apparatus was devised, and the high-concentration ozone was used as oxide source in molecular beam epitaxy (MBE) to prepare Bi-based oxide thin films. The concentration (molar fraction) of ozone reached above 95% when the silica gel was kept at about -85 degrees C for 6 h, and can be kept over 5 h when the pressure in concentrating apparatus kept 1.3x 10(3) Pa. X-ray diffraction (XRD) demonstrated that the high-concentration ozone can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source is good enough to prepare high quality Bi(2)Sr(2)CuO(6+x) and Bi(2)Sr(2)CaCu(2)O(8+x) thin films on the MgO (100) substrates by MBE.
关键词	GROWTH DEPOSITION GENERATOR PRESSURE INSITU LAYER ozone concentrating apparatus Bi-based oxide thin film molecular beam epitaxy (MBE)
收录类别	CSCD
语种	英语
CSCD记录号	CSCD:3323936
引用统计	被引频次：1[CSCD] [CSCD记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/147959
专题	中国科学院金属研究所
作者单位	1.中国科学院金属研究所 2.上海市地震局
推荐引用方式 GB/T 7714	Zhang Bingsen,Yu Xiaoming,Sun Xiaguang,et al. Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy[J]. ACTA METALLURGICA SINICA,2008,44(6):647-651.
APA	Zhang Bingsen,Yu Xiaoming,Sun Xiaguang,Li Maolin,Zhang Caibei,&Qi Yang.(2008).Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy.ACTA METALLURGICA SINICA,44(6),647-651.
MLA	Zhang Bingsen,et al."Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy".ACTA METALLURGICA SINICA 44.6(2008):647-651.