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天然锗纳米晶的制备与中子嬗变掺杂研究
Alternative TitleThe preparation of natural Ge nanocrystals in SiO2 film and neutron transmutation doping
范立伟1; 卢铁城2; 敦少博1; 胡又文1; 陈青云1; 胡强1; 游草风1; 张松宝3; 唐彬3; 代君龙3
2011
Source Publication四川大学学报:自然科学版
ISSN0490-6756
Volume48.0Issue:003Pages:651-654
Abstract采用离子注入法及退火工艺,在硅基二氧化硅薄膜中制备了镶嵌结构的天然Ge纳米晶样品.通过退火实验研究,发现随着退火温度的升高,纳米晶的晶态峰峰位红移,这意味着Ge纳米晶受到的应力减小.当退火温度达到700℃时,纳米晶的晶态峰强度显著增强,而且薄膜中与Ge有关的缺陷发光减弱.采用中子嬗变掺杂法对天然Ge纳米晶进行了掺杂,X射线荧光光谱数据表明,样品中成功的引入了Ga杂质和As杂质.薄膜中形成的与Ge有关的缺陷具有稳定的结构,中子辐照之后其发光仍然存在,而且,掺杂后的样品中没有发现与Ga或As有关的缺陷发光.
Other AbstractNatural Ge nanocrystals embedded in SiO2 film were fabricated by ion-implantation and subsequent annealing. With increasing annealing temperature, the Raman peak of Ge nanocrystals red-shifts to lower wave numbers which indicates less stress around Ge nanocrystals. When annealed at 700℃, Ge nanocrystals grew faster and the photoluminescence related to defects decreased. Ga and As impurities could be introduced to nanocrystals by neutron transmutation doping method. The luminescence from Ge-related defects could be observed before and after neutron irradiation, which means that this kind of defect has a stable structure. No new color center was found in the sample after neutron transmutation doping.
Keyword天然Ge纳米晶 中子嬗变掺杂 拉曼光谱 X射线荧光光谱
Indexed ByCSCD
Language中文
CSCD IDCSCD:4204638
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/151655
Collection中国科学院金属研究所
Affiliation1.四川大学
2.中国科学院国际材料物理研究中心
3.中国工程物理研究院核物理与化学所
Recommended Citation
GB/T 7714
范立伟,卢铁城,敦少博,等. 天然锗纳米晶的制备与中子嬗变掺杂研究[J]. 四川大学学报:自然科学版,2011,48.0(003):651-654.
APA 范立伟.,卢铁城.,敦少博.,胡又文.,陈青云.,...&代君龙.(2011).天然锗纳米晶的制备与中子嬗变掺杂研究.四川大学学报:自然科学版,48.0(003),651-654.
MLA 范立伟,et al."天然锗纳米晶的制备与中子嬗变掺杂研究".四川大学学报:自然科学版 48.0.003(2011):651-654.
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