In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects | |
Zhao, Siwen; Dong, Baojuan; Wang, Huide; Wang, Hanwen; Zhang, Yupeng; Han, Zheng Vitto; Zhang, Han | |
2020 | |
Source Publication | NANOSCALE ADVANCES
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Volume | 2Issue:1Pages:109-139 |
Abstract | Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices. |
DOI | 10.1039/c9na00623k |
WOS ID | WOS:000508943100003 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/155729 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | Zhao, Siwen,Dong, Baojuan,Wang, Huide,et al. In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects[J]. NANOSCALE ADVANCES,2020,2(1):109-139. |
APA | Zhao, Siwen.,Dong, Baojuan.,Wang, Huide.,Wang, Hanwen.,Zhang, Yupeng.,...&Zhang, Han.(2020).In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.NANOSCALE ADVANCES,2(1),109-139. |
MLA | Zhao, Siwen,et al."In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects".NANOSCALE ADVANCES 2.1(2020):109-139. |
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