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纳米SiC粒子对(BiPb)2Sr2Ca2Cu3O10+δ超导体磁通钉扎性能的增强
苏晓东; 阳宗全; 王永忠; 张成; 花凌; 汤洪; 乔桂文
1998
Source Publication金属学报
ISSN0412-1961
Volume34.0Issue:009Pages:999-1004
Abstract在(BiPb)2Sr2Ca2Cu3O10+δ/nano-SiC复合材料中,纳米SiC粒子掺加适量时可在5K的低温下有效地钉所磁通,并在77K的较高运行温度下仍能抑制超导体的热激活磁通蠕动,成为有效的磁通钉扎中心,但对临界转变温度无多大影响。
KeywordBi2223 超导体 磁通钉扎 纳米碳化硅
Indexed ByCSCD
Language中文
CSCD IDCSCD:448659
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/156633
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
苏晓东,阳宗全,王永忠,等. 纳米SiC粒子对(BiPb)2Sr2Ca2Cu3O10+δ超导体磁通钉扎性能的增强[J]. 金属学报,1998,34.0(009):999-1004.
APA 苏晓东.,阳宗全.,王永忠.,张成.,花凌.,...&乔桂文.(1998).纳米SiC粒子对(BiPb)2Sr2Ca2Cu3O10+δ超导体磁通钉扎性能的增强.金属学报,34.0(009),999-1004.
MLA 苏晓东,et al."纳米SiC粒子对(BiPb)2Sr2Ca2Cu3O10+δ超导体磁通钉扎性能的增强".金属学报 34.0.009(1998):999-1004.
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