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In2O3:Sn和ZnO:Al透明导电薄膜的结构及其导电机制
陈猛; 白雪冬; 黄荣芳; 闻立时
2000
Source Publication半导体学报
ISSN1674-4926
Volume21.0Issue:004Pages:394-399
Abstract基于对锡掺杂三氧化铟(Sn-doped In2O3,简称ITO)和铝掺杂氧化锌(Al-doped ZnO,简称ZAO)薄膜退火前后XRD数据的分析,研究了薄膜晶格常数畸变的原因,同时讨论了ITO和ZAO薄膜的导电机制。结果表明,低温沉积ITO薄膜的晶格膨胀来源于Sn^2+对In^3+的替换,导电电子则由氧缺位提供;高温在位制备和退火处理后薄膜的晶格收缩来源于Sn^4+对In^3+的替换,导电电子则
Keyword导电薄膜 结构 导电机制 氧化锌 氧化铟
Indexed ByCSCD
Language中文
CSCD IDCSCD:532714
Citation statistics
Cited Times:21[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/156829
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
陈猛,白雪冬,黄荣芳,等. In2O3:Sn和ZnO:Al透明导电薄膜的结构及其导电机制[J]. 半导体学报,2000,21.0(004):394-399.
APA 陈猛,白雪冬,黄荣芳,&闻立时.(2000).In2O3:Sn和ZnO:Al透明导电薄膜的结构及其导电机制.半导体学报,21.0(004),394-399.
MLA 陈猛,et al."In2O3:Sn和ZnO:Al透明导电薄膜的结构及其导电机制".半导体学报 21.0.004(2000):394-399.
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