柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性

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	柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性
	陈猛; 白雪冬; 黄荣芳; 闻立时
	1999
Source Publication	金属学报
ISSN	0412-1961
Volume	35.0 Issue:004 Pages:443-448
Abstract	利用直流磁控反应溅射铟锡合金靶和锌合金钯，在软基片上低温沉积了Ｉｎ２Ｏ３：Ｓｎ（ＩＴＯ）和ＺｎＯ：Ａｌ（ＺＡＯ）透明电薄膜。结果表明，ＩＴＯ和ＺＡＯ薄膜均出现晶格畸变；柔性基片上低温沉积薄膜的电阻率对氧分压的依赖性远低于硅和玻璃衬底；尺度效应对薄膜电阻率有重要的影响。
Keyword	柔性基片光学能隙半导体薄膜制备 ITO ZAO
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:675290
Citation statistics	Cited Times:5[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/156904
Collection	中国科学院金属研究所
Affiliation	中国科学院金属研究所
Recommended Citation GB/T 7714	陈猛,白雪冬,黄荣芳,等. 柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性[J]. 金属学报,1999,35.0(004):443-448.
APA	陈猛,白雪冬,黄荣芳,&闻立时.(1999).柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性.金属学报,35.0(004),443-448.
MLA	陈猛,et al."柔性基片上In2O3：Sn和ZnO：Al薄膜的制备及其电学和光学特性".金属学报 35.0.004(1999):443-448.

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