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柔性基片上In2O3:Sn和ZnO:Al薄膜的制备及其电学和光学特性
陈猛; 白雪冬; 黄荣芳; 闻立时
1999
Source Publication金属学报
ISSN0412-1961
Volume35.0Issue:004Pages:443-448
Abstract利用直流磁控反应溅射铟锡合金靶和锌合金钯,在软基片上低温沉积了In2O3:Sn(ITO)和ZnO:Al(ZAO)透明电薄膜。结果表明,ITO和ZAO薄膜均出现晶格畸变;柔性基片上低温沉积薄膜的电阻率对氧分压的依赖性远低于硅和玻璃衬底;尺度效应对薄膜电阻率有重要的影响。
Keyword柔性基片 光学能隙 半导体薄膜 制备 ITO ZAO
Indexed ByCSCD
Language中文
CSCD IDCSCD:675290
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/156904
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
陈猛,白雪冬,黄荣芳,等. 柔性基片上In2O3:Sn和ZnO:Al薄膜的制备及其电学和光学特性[J]. 金属学报,1999,35.0(004):443-448.
APA 陈猛,白雪冬,黄荣芳,&闻立时.(1999).柔性基片上In2O3:Sn和ZnO:Al薄膜的制备及其电学和光学特性.金属学报,35.0(004),443-448.
MLA 陈猛,et al."柔性基片上In2O3:Sn和ZnO:Al薄膜的制备及其电学和光学特性".金属学报 35.0.004(1999):443-448.
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