| 外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征 | |
| Alternative Title | Transmission electron microscopy characterization of dislocations in epitaxial gadolinia-doped ceria films |
| 宋克鹏; 杜奎; 叶恒强 | |
| 2015 | |
| Source Publication | 电子显微学报
 |
| ISSN | 1000-6281 |
| Volume | 34.0Issue:1.0Pages:14-17 |
| Abstract | 利用脉冲激光沉积（ pulsed laser depositon， PLD）方法在YSZ（ Y2 O3 stabilised zirconia）单晶衬底上外延生长了Gd掺杂的CeO2薄膜（gadolinium doped CeO2，GDC）。利用透射电子显微镜（TEM）对GDC／YSZ界面以及GDC薄膜内部的位错结构进行了表征。实验发现，界面处存在周期性分布的失配位错，界面失配主要通过失配位错释放。 GDC薄膜内部存在两种不同的位错，其中一种为纯刃型位错，另外一种为混合型位错。 |
| Other Abstract | Epitaxial Gd-doped CeO2（GDC） films grown on Y2O3？stabilised ZrO2（001） （YSZ） substrates by pulsed laser deposition （ PLD ） were investigated by transmission electron microscopy （ TEM ） and high-resolution transmission electron microscopy （ HRTEM） . Selected area diffraction （ SAD） patterns showed a cubic-on？cubic orientation relationship between the GDC films and the YSZ substrates. A semi-coherent interface with periodic misfit dislocations was revealed by HRTEM when imaged from 100 direction. The interface misfit dislocations at the interface were supposed to be the main mechanism for the strain relaxation of the interface . Two types of dislocations with Burgers vector b=1/2〈011〉 in GDC films were also revealed by HRTEM：one was pure edge dislocation and the other was a mixed type. |
| Keyword | 固体氧化物燃料电池 外延生长 GDC 位错 高分辨透射电子显微像 |
| Indexed By | CSCD |
| Language | 中文 |
| CSCD ID | CSCD:5360395 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/157270 |
| Collection | 中国科学院金属研究所 |
| Affiliation | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | 宋克鹏,杜奎,叶恒强. 外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征[J]. 电子显微学报,2015,34.0(1.0):14-17. |
| APA | 宋克鹏,杜奎,&叶恒强.(2015).外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征.电子显微学报,34.0(1.0),14-17. |
| MLA | 宋克鹏,et al."外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征".电子显微学报 34.0.1.0(2015):14-17. |
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