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外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征
Alternative TitleTransmission electron microscopy characterization of dislocations in epitaxial gadolinia-doped ceria films
宋克鹏; 杜奎; 叶恒强
2015
Source Publication电子显微学报
ISSN1000-6281
Volume34.0Issue:1.0Pages:14-17
Abstract利用脉冲激光沉积( pulsed laser depositon, PLD)方法在YSZ( Y2 O3 stabilised zirconia)单晶衬底上外延生长了Gd掺杂的CeO2薄膜(gadolinium doped CeO2,GDC)。利用透射电子显微镜(TEM)对GDC/YSZ界面以及GDC薄膜内部的位错结构进行了表征。实验发现,界面处存在周期性分布的失配位错,界面失配主要通过失配位错释放。 GDC薄膜内部存在两种不同的位错,其中一种为纯刃型位错,另外一种为混合型位错。
Other AbstractEpitaxial Gd-doped CeO2(GDC) films grown on Y2O3?stabilised ZrO2(001) (YSZ) substrates by pulsed laser deposition ( PLD ) were investigated by transmission electron microscopy ( TEM ) and high-resolution transmission electron microscopy ( HRTEM) . Selected area diffraction ( SAD) patterns showed a cubic-on?cubic orientation relationship between the GDC films and the YSZ substrates. A semi-coherent interface with periodic misfit dislocations was revealed by HRTEM when imaged from 100 direction. The interface misfit dislocations at the interface were supposed to be the main mechanism for the strain relaxation of the interface . Two types of dislocations with Burgers vector b=1/2〈011〉 in GDC films were also revealed by HRTEM:one was pure edge dislocation and the other was a mixed type.
Keyword固体氧化物燃料电池 外延生长 GDC 位错 高分辨透射电子显微像
Indexed ByCSCD
Language中文
CSCD IDCSCD:5360395
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/157270
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
宋克鹏,杜奎,叶恒强. 外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征[J]. 电子显微学报,2015,34.0(1.0):14-17.
APA 宋克鹏,杜奎,&叶恒强.(2015).外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征.电子显微学报,34.0(1.0),14-17.
MLA 宋克鹏,et al."外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征".电子显微学报 34.0.1.0(2015):14-17.
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