| 大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为 | |
| Alternative Title | Electron structure and vacuum discharging characteristics of bulk amorphous alloys Zr55Cu30Al10Ni5 |
| 曹峻松; 王亚平; 孙军 | |
| 2006 | |
| Source Publication | 材料研究学报
 |
| ISSN | 1005-3093 |
| Volume | 20.0Issue:002Pages:136-140 |
| Abstract | 测定了大块非晶合金Zr55Cu30Al10Ni5晶化前后的费米能级和各元素的电子结合能，研究了非品合金的电子结构特征和电击穿行为．测试并讨论了非晶材料场发射能力和耐电压强度的关系．结果表明，对于Zr基合金，非品态比品态合金具有更大的功函数．比较了Zr55Cu30Al10Ni5合金非晶态与晶态的耐电压强度数值，发现非晶态合金的耐电压强度数值比较分散，品化合金的耐电压强度相对比较集中．耐电压强度平均值表明，Zr基合金非晶态具有更好的耐电压能力． |
| Other Abstract | The orbital binding energy and Fermi level of individual element of amorphous and crystallized Zr55Cu30Al10Ni5 alloys were measured by XPS. The relationship between the electron structure and the capability of field emission of the alloys was investigated. The breakdown strength in vacuum of the amorphous and thereafter crystallized alloys were investigated. It is found that Zr-based bulk amorphous alloys have greater work function than the crystallized alloys. Comparing with the crystalline Zr55Cu30Al10Ni5 alloy with a more centralized distribution, the dielectric strengths of amorphous Zr55Cu30Al10Ni5 alloy are more disperse. It can be concluded that Zr-based bulk amorphous alloys have higher dielectric strength than the crystallized alloys. |
| Keyword | 金属材料 功函数 场制发射 击穿 费米能级 |
| Indexed By | CSCD |
| Language | 中文 |
| CSCD ID | CSCD:2426189 |
| Citation statistics |
Cited Times:1[CSCD]
[CSCD Record]
|
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/157353 |
| Collection | 中国科学院金属研究所 |
| Affiliation | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | 曹峻松,王亚平,孙军. 大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为[J]. 材料研究学报,2006,20.0(002):136-140. |
| APA | 曹峻松,王亚平,&孙军.(2006).大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为.材料研究学报,20.0(002),136-140. |
| MLA | 曹峻松,et al."大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为".材料研究学报 20.0.002(2006):136-140. |
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