IMR OpenIR
一种光响应敏感的碲化铋薄膜和硅基片形成的PN结材料
王振华;  张志东;  李名泽;  杨亮;  赵晓天;  高翾
2019-02-12
Rights Holder王振华 ; 张志东 ; 李名泽 ; 杨亮 ; 赵晓天 ; 高翾
Country中国
Subtype发明专利
Patent Number201610183745.5
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/158304
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
王振华;张志东;李名泽;杨亮;赵晓天;高翾. 一种光响应敏感的碲化铋薄膜和硅基片形成的PN结材料. 201610183745.5[P]. 2019-02-12.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王振华;张志东;李名泽;杨亮;赵晓天;高翾]'s Articles
Baidu academic
Similar articles in Baidu academic
[王振华;张志东;李名泽;杨亮;赵晓天;高翾]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王振华;张志东;李名泽;杨亮;赵晓天;高翾]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.