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窄带隙分布、高纯度半导体性单壁碳纳米管的制备方法
刘畅、张峰、侯鹏翔、成会明
2019-05-10
Rights Holder刘畅、张峰、侯鹏翔、成会明
Country中国
Subtype发明专利
Patent Number201610088012.3
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/158362
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
刘畅、张峰、侯鹏翔、成会明. 窄带隙分布、高纯度半导体性单壁碳纳米管的制备方法. 201610088012.3[P]. 2019-05-10.
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