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基于单根孪晶结构GaN纳米线的紫外光电探测器及制备方法
姜辛、刘宝丹、张兴来、刘青云、贾文博、刘鲁生
2019-10-22
Rights Holder姜辛、刘宝丹、张兴来、刘青云、贾文博、刘鲁生
Country中国
Subtype发明专利
Patent Number201610818729.9
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/158450
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
姜辛、刘宝丹、张兴来、刘青云、贾文博、刘鲁生. 基于单根孪晶结构GaN纳米线的紫外光电探测器及制备方法. 201610818729.9[P]. 2019-10-22.
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