Self-accommodated defect structures modifying the growth of Laves phase

doi:10.1016/j.jmst.2020.05.042

IMR OpenIR

	Self-accommodated defect structures modifying the growth of Laves phase
	Yang, Tong 1; Kong, Yi 1; Lu, Jiangbo 2; Zhang, Zhenjun 3; Yang, Mingjun 1; Yan, Ning 4; Li, Kai 1,4; Du, Yong 1,4
通讯作者	Li, Kai(leking@csu.edu.cn) ; Du, Yong(yong-du@csu.edu.cn)
	2021-01-30
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	62 页码:203-213
摘要	Laves phases, with the topologically close-packed structure and a chemical formula of AB(2), constitute the largest single class of intermetallics. Planar defects in Laves phases are widely investigated, especially for stacking behavior transformations through synchroshear. Here, we report the coexistence of C14, C36 and C15 structures in MgZn2 precipitates by using atomic resolution scanning transmission electron microscopy, verifying the previously predicted Laves phase transformation sequence of C14 -> C36 -> C15 also applies to MgZn2. One type of stacking fault couple in precipitates has been found to alone reduce the lattice mismatch with matrix, while some other stacking fault couples need to self-accommodate with irregular planar defects (rhombic units and flattened hexagonal units), or with five-fold symmetry structures to relieve the strain concentration. Precipitates thus grow towards an equiaxed or even round morphology, rather than the plate morphology as conventionally believed. Molecular dynamics calculations are performed to support our analysis. These findings reveal the principles governing the concurrent occurrence of various defects in laves structures, acting as an update of the widely accepted perception of random occurrence of defects during crystal growth. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	High angle annular dark field (HAADF) Defects Stacking faults Strain
资助者	National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; Advanced Research Center of CSU ; SNU
DOI	10.1016/j.jmst.2020.05.042
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51820105001] ; National Natural Science Foundation of China[51771234] ; National Natural Science Foundation of China[51531009] ; National Natural Science Foundation of China[51790482] ; Fundamental Research Funds for the Central Universities[GK201803016] ; Advanced Research Center of CSU ; SNU
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000601221700020
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/158811
专题	中国科学院金属研究所
通讯作者	Li, Kai; Du, Yong
作者单位	1.Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China 2.Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710119, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Mat Fatigue & Fracture Div, Shenyang 110016, Peoples R China 4.Cent South Univ, Inst Mat Microstruct, Changsha 410083, Peoples R China
推荐引用方式 GB/T 7714	Yang, Tong,Kong, Yi,Lu, Jiangbo,et al. Self-accommodated defect structures modifying the growth of Laves phase[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2021,62:203-213.
APA	Yang, Tong.,Kong, Yi.,Lu, Jiangbo.,Zhang, Zhenjun.,Yang, Mingjun.,...&Du, Yong.(2021).Self-accommodated defect structures modifying the growth of Laves phase.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,62,203-213.
MLA	Yang, Tong,et al."Self-accommodated defect structures modifying the growth of Laves phase".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 62(2021):203-213.