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High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient
Aziz, Tariq1,2; Wei, Shijing1,2,3; Sun, Yun1,4; Ma, Lai-Peng1,4; Pei, Songfeng1,4; Dong, Shichao1,4; Ren, Wencai1,4; Liu, Qi5; Cheng, Hui-Ming1,2,6; Sun, Dong-Ming1,4
Corresponding AuthorMa, Lai-Peng(lpma@imr.ac.cn) ; Liu, Qi(qi_liu@fudan.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
2021-01-28
Source PublicationNANOSCALE
ISSN2040-3364
Volume13Issue:4Pages:2448-2455
AbstractThe conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its redox reaction with an active metal electrode, so the obtained RRAMs are typically plagued by inferior performance and reliability. Here, we report a strategy to develop high-performance flexible RRAMs by using graphene oxidized with a perpendicular oxidation gradient as the resistive layer. In contrast to a homogeneous oxide, this graphene together with its distinctive inter-layer oxygen diffusion path enables excellent oxygen ion/vacancy diffusion. Without an interfacial redox reaction, oxygen ions can diffuse to form conductive filaments with two inert metal electrodes by applying a bias voltage. Compared with state-of-the-art graphene oxide RRAMs, these graphene RRAMs have shown superior performance including a high on-off current ratio of similar to 10(5), long-term retention of similar to 10(6) s, reproducibility over 10(4) cycles and long-term flexibility at a bending strain of 0.6%, indicating that the material has great potential in wearable smart data-storage devices.
Funding OrganizationNational Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences
DOI10.1039/d0nr07888c
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51502304] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Liaoning Revitalization Talents Program[XLYC1807109] ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China[2016YFB0401104] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[L2019F28] ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[SKLA-2019-03]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000614867500024
PublisherROYAL SOC CHEMISTRY
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/159082
Collection中国科学院金属研究所
Corresponding AuthorMa, Lai-Peng; Liu, Qi; Sun, Dong-Ming
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
3.Henan Univ, Key Lab Photovolta Mat, 1 Jinming Rd, Kalfeng 475004, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
5.Fudan Univ, Frontier Inst Chip & Syst, 2005 Shonghu Rd, Shanghai 200433, Peoples R China
6.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Aziz, Tariq,Wei, Shijing,Sun, Yun,et al. High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient[J]. NANOSCALE,2021,13(4):2448-2455.
APA Aziz, Tariq.,Wei, Shijing.,Sun, Yun.,Ma, Lai-Peng.,Pei, Songfeng.,...&Sun, Dong-Ming.(2021).High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient.NANOSCALE,13(4),2448-2455.
MLA Aziz, Tariq,et al."High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient".NANOSCALE 13.4(2021):2448-2455.
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