Donor-Acceptor Compensated ZnO Semiconductor for Photoelectrochemical Biosensors | |
Chen, Delun1; Zou, Xue1; Dong, Fan1; Zhen, Chao2; Xiao, Dan3,4; Wang, Xiaohong1; Wu, Qiang5; Cao, Yang1,6; Tu, Jinchun1 | |
Corresponding Author | Zhen, Chao(czhen@imr.ac.cn) ; Tu, Jinchun(tujinchun@hainanu.edu.cn) |
2021-07-21 | |
Source Publication | ACS APPLIED MATERIALS & INTERFACES
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ISSN | 1944-8244 |
Volume | 13Issue:28Pages:33006-33014 |
Abstract | Hindering the recombination of a photogenerated carrier is a crucial method to enhance the photoelectrochemical performance of ZnO due to its high exciton binding energy. Herein, the intramolecular donor-acceptor compensated semiconductor ZnO (I-D/A ZnO), introducing C dopants and oxygen vacancies, was prepared with the assistance of ascorbic acid (AA). According to the DFT calculations, the asymmetry DOS could lead to the longer carrier lifetime and the smaller electron transfer resistance. Then, the photoelectrochemical biosensor toward glucose was regarded as a model to discuss the application of ZnO in biosensors. As a result, the biosensor based on ID/A ZnO showed good performance with high sensitivity, low limit of detection, and fine anti-interference, meaning that I-D/A ZnO is a promising semiconductor for photoelectrochemical biosensors. |
Keyword | zinc oxide donor-acceptor compensated semiconductors photoelectrochemical biosensors oxygen vacancies carbon doping |
Funding Organization | Chinese Academy of Medical Sciences ; National Natural Science Foundation of China ; Finance Science and Technology Project of Hainan Province ; Key laboratory and trauma (Hainan Medical University), Ministry of Education ; Youth Innovation Promotion Association of the Chinese Academy of Sciences |
DOI | 10.1021/acsami.1c07499 |
Indexed By | SCI |
Language | 英语 |
Funding Project | Chinese Academy of Medical Sciences ; National Natural Science Foundation of China[51762012] ; National Natural Science Foundation of China[82060386] ; National Natural Science Foundation of China[51862006] ; National Natural Science Foundation of China[52072377] ; Finance Science and Technology Project of Hainan Province[ZDYF2019161] ; Finance Science and Technology Project of Hainan Province[2018106] ; Finance Science and Technology Project of Hainan Province[2019RC221] ; Key laboratory and trauma (Hainan Medical University), Ministry of Education[KLET-201910] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2020192] |
WOS Research Area | Science & Technology - Other Topics ; Materials Science |
WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS ID | WOS:000677540900037 |
Publisher | AMER CHEMICAL SOC |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/159713 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Zhen, Chao; Tu, Jinchun |
Affiliation | 1.Hainan Univ, Key Lab Adv Mat Trop Isl Resources, State Key Lab Marine Resource Utilizat South Chin, Haikou 570228, Hainan, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Sichuan Univ, Key Lab Green & Technol, Minist Educ, Coll Chem, Chengdu 610065, Peoples R China 4.Sichuan Univ, Coll Chem Engn, Chengdu 610065, Peoples R China 5.Hainan Med Univ, Sch Trop Med & Lab Med, MOE Key Lab Emergency & Trauma, Haikou 571199, Hainan, Peoples R China 6.Qiongtai Normal Univ, Key Lab Child Cognit & Behav Dev Hainan Prov, Haikou 571127, Hainan, Peoples R China |
Recommended Citation GB/T 7714 | Chen, Delun,Zou, Xue,Dong, Fan,et al. Donor-Acceptor Compensated ZnO Semiconductor for Photoelectrochemical Biosensors[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(28):33006-33014. |
APA | Chen, Delun.,Zou, Xue.,Dong, Fan.,Zhen, Chao.,Xiao, Dan.,...&Tu, Jinchun.(2021).Donor-Acceptor Compensated ZnO Semiconductor for Photoelectrochemical Biosensors.ACS APPLIED MATERIALS & INTERFACES,13(28),33006-33014. |
MLA | Chen, Delun,et al."Donor-Acceptor Compensated ZnO Semiconductor for Photoelectrochemical Biosensors".ACS APPLIED MATERIALS & INTERFACES 13.28(2021):33006-33014. |
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