Single-Dislocation Schottky Diodes
Tao, Ang1,2; Yao, Tingting1,2; Jiang, Yixiao1,2; Yang, Lixin1; Yan, Xuexi1; Ohta, Hiromichi3; Ikuhara, Yuichi4,5,6; Chen, Chunlin1,2; Ye, Hengqiang2; Ma, Xiuliang1,7
Corresponding AuthorChen, Chunlin( ; Ma, Xiuliang(
Source PublicationNANO LETTERS
AbstractDislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of similar to 10(3). A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.
Keyworddislocation Schottky diode conductive atomic force microscopy transmission electron microscopy first-principles calculations
Funding OrganizationNational Natural Science Foundation of China ; LiaoNing Revitalization Talents Program ; Key Research Program of Frontier Sciences, CAS ; Ji Hua Laboratory Project ; MEXT ; JSPS
Indexed BySCI
Funding ProjectNational Natural Science Foundation of China[51771200] ; National Natural Science Foundation of China[51971224] ; National Natural Science Foundation of China[51801215] ; LiaoNing Revitalization Talents Program[XLYC1802088] ; Key Research Program of Frontier Sciences, CAS[QYZDY-SSW-JSC027] ; Ji Hua Laboratory Project[X210141TL210] ; MEXT[12024046] ; JSPS[19H05791] ; JSPS[JP17H06094] ; JSPS[17H01314]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000674354200019
Citation statistics
Document Type期刊论文
Corresponding AuthorChen, Chunlin; Ma, Xiuliang
Affiliation1.Chinese Acad Sci, Univ Sci & Technol China, Sch Mat Sci & Engn, Inst Met Res,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Ji Hua Lab, Foshan 528200, Peoples R China
3.Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan
4.Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
5.Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan
6.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
7.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
Recommended Citation
GB/T 7714
Tao, Ang,Yao, Tingting,Jiang, Yixiao,et al. Single-Dislocation Schottky Diodes[J]. NANO LETTERS,2021,21(13):5586-5592.
APA Tao, Ang.,Yao, Tingting.,Jiang, Yixiao.,Yang, Lixin.,Yan, Xuexi.,...&Ma, Xiuliang.(2021).Single-Dislocation Schottky Diodes.NANO LETTERS,21(13),5586-5592.
MLA Tao, Ang,et al."Single-Dislocation Schottky Diodes".NANO LETTERS 21.13(2021):5586-5592.
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