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Progress in Surface Charge Transfer Doping of Graphene
Ma, Lai-Peng1,2; Ren, Wencai1,2; Cheng, Hui-Ming1,2,3
Corresponding AuthorRen, Wencai(wcren@imr.ac.cn)
2022-01-15
Source PublicationACTA PHYSICO-CHIMICA SINICA
ISSN1000-6818
Volume38Issue:1Pages:14
AbstractGraphene has shown great promise in the development of next-generation electronic and optoelectronic devices owing to its atomic thickness and extraordinary electrical/optical/thermal/mechanical properties. Surface charge transfer doping is an important strategy to modulate graphene's electrical and optical properties. Compared with other doping methods, surface charge transfer doping shows distinct advantages in several aspects such as the minimized negative impact on the carrier mobility without disrupting the graphene lattice, wide range and precise control over the doping concentration, and highly efficient treatment processes without using high-temperature or ion implantation. Therefore, it is necessary to develop strong and stable surface charge transfer dopants to improve the electrical and optical performances of graphene, advancing its potential application in electronics and optoelectronics. For more than a decade, efforts has been devoted to developing diverse surface charge transfer p- and n-type dopants, including acids, gases, transition metals, alkali metals, metal chlorides, metal oxides, organics containing electron-donating/withdrawing groups, ferroelectric organics, and carbon-based materials, which serve as a wide range of ways to modulate the properties of graphene. Recently, remarkable progress has been made in realizing heavy and stable doping by surface charge transfer. In this review, we summarize the research status of surface charge transfer doping for graphene and its application in electronic and optoelectronic devices by focusing on the doping strength and stability. Initially, we survey the typical surface charge transfer doping mechanisms and widely used characterization measures, discussing their advantages and limitations. We then review the recent progress in the development of strong p- and n-type surface charge transfer dopants for graphene. For example, heavy p- and n-doping in graphene has been achieved by intercalation doping with metal chlorides and alkali metals, respectively. A large-area graphene film with stable p-doping was also realized. Of particular interest, organics are promising materials for developing emerging dopants with high structural tunability and diverse functions. We also introduce novel stable dopants and effective strategies for improving the ambient/thermal/solvent stability of typical dopants. Then, we devote a manuscript section to advances in high-performance optoelectronic devices using doped graphene electrodes with superior performances, focusing on graphene-based touch screens, organic light-emitting diodes, and organic photovoltaics. In this area, graphene-based flexible light-emitting devices have demonstrated advantages over typical tin-doped indium oxide (ITO) devices in terms of overall efficiencies. Finally, we discuss the challenges faced in developing state-of-the-art surface charge transfer dopants with future perspectives.
KeywordGraphene Doping Charge transfer Carrier concentration
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences Program ; Liaoning Revitalization Talents Program
DOI10.3866/PKU.WHXB202012080
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2016YFA0200101] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; Chinese Academy of Sciences Program[ZDBS-LY-JSC027] ; Chinese Academy of Sciences Program[XDB30000000] ; Chinese Academy of Sciences Program[KGZD-EW-303-1] ; Chinese Academy of Sciences Program[KGZD-EW-303-3] ; Chinese Academy of Sciences Program[KGZD-EW-T06] ; Liaoning Revitalization Talents Program[XLYC1808013]
WOS Research AreaChemistry
WOS SubjectChemistry, Physical
WOS IDWOS:000668430400011
PublisherPEKING UNIV PRESS
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/159967
Collection中国科学院金属研究所
Corresponding AuthorRen, Wencai
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen 518055, Guangdong, Peoples R China
Recommended Citation
GB/T 7714
Ma, Lai-Peng,Ren, Wencai,Cheng, Hui-Ming. Progress in Surface Charge Transfer Doping of Graphene[J]. ACTA PHYSICO-CHIMICA SINICA,2022,38(1):14.
APA Ma, Lai-Peng,Ren, Wencai,&Cheng, Hui-Ming.(2022).Progress in Surface Charge Transfer Doping of Graphene.ACTA PHYSICO-CHIMICA SINICA,38(1),14.
MLA Ma, Lai-Peng,et al."Progress in Surface Charge Transfer Doping of Graphene".ACTA PHYSICO-CHIMICA SINICA 38.1(2022):14.
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