IMR OpenIR
An ultrasensitive molybdenum-based double-heterojunction phototransistor
Feng, Shun1,2; Liu, Chi1; Zhu, Qianbing1,3; Su, Xin4; Qian, Wangwang1,3; Sun, Yun1; Wang, Chengxu1,3; Li, Bo1,3; Chen, Maolin1,3; Chen, Long1; Chen, Wei1,3; Zhang, Lili1; Zhen, Chao1; Wang, Feijiu5; Ren, Wencai1,3; Yin, Lichang1,3; Wang, Xiaomu4; Cheng, Hui-Ming1,3,6; Sun, Dong-Ming1,3
Corresponding AuthorYin, Lichang(lcyin@imr.ac.cn) ; Wang, Xiaomu(xiaomu.wang@nju.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
2021-07-02
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume12Issue:1Pages:8
AbstractTwo-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and alpha -MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8x10(16)cm Hz(1/2) W-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity. Here, the authors exploit a photo-induced barrier-lowering mechanism in MoS2/ alpha -MoO3-x heterojunctions to realize two-dimensional phototransistors with enhanced performance and fast response at low bias voltage.
Funding OrganizationNational Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; Liaoning Revitalization Talents Program ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences
DOI10.1038/s41467-021-24397-x
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51502304] ; National Natural Science Foundation of China[51972312] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Liaoning Revitalization Talents Program[XLYC1807109] ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China[2016YFB0401104] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[L2019F28] ; State Key Laboratory of Luminescence and Applications, Chinese Academy of Sciences[SKLA-2019-03]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000672164300007
PublisherNATURE RESEARCH
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/159973
Collection中国科学院金属研究所
Corresponding AuthorYin, Lichang; Wang, Xiaomu; Cheng, Hui-Ming; Sun, Dong-Ming
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Peoples R China
4.Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct,Sch Phys, Nanjing, Peoples R China
5.Henan Univ, Henan Key Lab Photovolta Mat, Kaifeng, Peoples R China
6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen, Peoples R China
Recommended Citation
GB/T 7714
Feng, Shun,Liu, Chi,Zhu, Qianbing,et al. An ultrasensitive molybdenum-based double-heterojunction phototransistor[J]. NATURE COMMUNICATIONS,2021,12(1):8.
APA Feng, Shun.,Liu, Chi.,Zhu, Qianbing.,Su, Xin.,Qian, Wangwang.,...&Sun, Dong-Ming.(2021).An ultrasensitive molybdenum-based double-heterojunction phototransistor.NATURE COMMUNICATIONS,12(1),8.
MLA Feng, Shun,et al."An ultrasensitive molybdenum-based double-heterojunction phototransistor".NATURE COMMUNICATIONS 12.1(2021):8.
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