Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides | |
Liu, Nan1,2; Cao, Yi1,2; Zhu, Yin-Lian1; Wang, Yu-Jia1; Tang, Yun-Long1; Wu, Bo3; Zou, Min-Jie3,4; Feng, Yan-Peng3,4; Ma, Xiu-Liang1,5 | |
通讯作者 | Zhu, Yin-Lian(ylzhu@imr.ac.cn) |
2021-07-07 | |
发表期刊 | ACS APPLIED MATERIALS & INTERFACES
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ISSN | 1944-8244 |
卷号 | 13期号:26页码:31001-31009 |
摘要 | Common pursuits of developing nanometric logic and neuromorphic applications have motivated intensive research studies into low-dimensional resistive random-access memory (RRAM) materials. However, fabricating resistive switching medium with inherent stability and homogeneity still remains a bottleneck. Herein, we report a self-assembled uniform biphasic system, comprising low-resistance 3 nm-wide (Bi-0.4,La-0.6)FeO3-delta nanosheets coherently embedded in a high-resistance (Bi-0.2,La-0.8)FeO3-delta matrix, which were spinodally decomposed from an overall stoichiometry of the (Bi-0.24,La-0.76)FeO3-delta parent phase, as a promising nanocomposite to be a stable and endurable RRAM medium. The Bi-rich nanosheets accommodating high concentration of oxygen vacancies as corroborated by X-ray photoelectron spectroscopy and electron energy loss spectroscopy function as fast carrier channels, thus enabling an intrinsic electroforming-free character. Surficial electrical state and resistive switching properties are investigated using multimodal scanning probe microscopy techniques and macroscopic I-V measurements, showing high on/off ratio (similar to 10(3)) and good endurance (up to 1.6 x 10(4) cycles). The established spinodal decomposition-driven phase-coexistence BLFO system demonstrates the merits of stability, uniformity, and endurability, which is promising for further application in RRAM devices. |
关键词 | resistive switching spinodal decomposition perovskites atomic force microscopy transmission electron microscopy |
资助者 | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences CAS ; Shenyang National Laboratory for Materials Science ; Scientific Instrument Developing Project of CAS ; Youth Innovation Promotion Association CAS |
DOI | 10.1021/acsami.1c06649 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[51922100] ; Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Scientific Instrument Developing Project of CAS[YJKYYQ20200066] ; Youth Innovation Promotion Association CAS[2021187] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000672492800073 |
出版者 | AMER CHEMICAL SOC |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/159993 |
专题 | 中国科学院金属研究所 |
通讯作者 | Zhu, Yin-Lian |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 5.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Nan,Cao, Yi,Zhu, Yin-Lian,et al. Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(26):31001-31009. |
APA | Liu, Nan.,Cao, Yi.,Zhu, Yin-Lian.,Wang, Yu-Jia.,Tang, Yun-Long.,...&Ma, Xiu-Liang.(2021).Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides.ACS APPLIED MATERIALS & INTERFACES,13(26),31001-31009. |
MLA | Liu, Nan,et al."Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides".ACS APPLIED MATERIALS & INTERFACES 13.26(2021):31001-31009. |
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