IMR OpenIR
Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode
Gao, Zhaoqing1; Chen, Yinbo2,3; Dong, Chong1; Chen, Fei1; Huang, Mingliang1; Ma, Haitao1; Wang, Yunpeng1
Corresponding AuthorWang, Yunpeng(yunpengw@dlut.edu.cn)
2021-09-15
Source PublicationMATERIALS CHEMISTRY AND PHYSICS
ISSN0254-0584
Volume270Pages:14
AbstractRoom temperature Ga-based alloys have received more and more attentions due to their unique advantages in these applications of stretchable and wearable electronics. In this paper, the interfacial stability of liquid GaInSn/ Cu interface was systematically investigated. From the perspective of crystallography, the orientation relationship between the nucleation and growth of intermetallic compounds and Cu substrate are discussed according to plane-on-plane matching model and edge-to-edge matching model. The required standard formation enthalpy and bond enthalpy of as-formed intermetallic compounds are estimated based on the elemental condensed bond enthalpy and crystal cluster theory. For the ternary GaInSn system, the competitive reactive mechanism between different reactive atomic pairs was revealed and discussed from the thermodynamic view, which verified that the rationality of the formed intermetallic compounds only consisting of Cu and Ga. Besides, we confirmed that the wetting behavior of GaInSn on Cu substrate was determined by the affinity and close contact probability of different atomic pairs.
KeywordLiquid GaInSn alloys Interfacial stability Interatomic affinity Competitive reactive mechanism Gibbs free energy change
Funding OrganizationNational Key Research and Development Program of China ; National Natural Science Foundation of China
DOI10.1016/j.matchemphys.2021.124809
Indexed BySCI
Language英语
Funding ProjectNational Key Research and Development Program of China[2017YFA0403804] ; National Natural Science Foundation of China[U1837208]
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000672582000003
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/160070
Collection中国科学院金属研究所
Corresponding AuthorWang, Yunpeng
Affiliation1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Gao, Zhaoqing,Chen, Yinbo,Dong, Chong,et al. Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode[J]. MATERIALS CHEMISTRY AND PHYSICS,2021,270:14.
APA Gao, Zhaoqing.,Chen, Yinbo.,Dong, Chong.,Chen, Fei.,Huang, Mingliang.,...&Wang, Yunpeng.(2021).Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode.MATERIALS CHEMISTRY AND PHYSICS,270,14.
MLA Gao, Zhaoqing,et al."Insight into the interatomic competitive mechanism for interfacial stability of room temperature liquid GaInSn/Cu electrode".MATERIALS CHEMISTRY AND PHYSICS 270(2021):14.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Gao, Zhaoqing]'s Articles
[Chen, Yinbo]'s Articles
[Dong, Chong]'s Articles
Baidu academic
Similar articles in Baidu academic
[Gao, Zhaoqing]'s Articles
[Chen, Yinbo]'s Articles
[Dong, Chong]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Gao, Zhaoqing]'s Articles
[Chen, Yinbo]'s Articles
[Dong, Chong]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.