Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides

doi:10.1093/nsr/nwaa115

IMR OpenIR

	Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides
	Cai, Zhengyang 1,2; Lai, Yongjue 1,2; Zhao, Shilong 1,2; Zhang, Rongjie 1,2; Tan, Junyang 1,2; Feng, Simin 1,2; Zou, Jingyun 1,2; Tang, Lei 1,2; Lin, Junhao 4; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,3
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
	2021-03-01
发表期刊	NATIONAL SCIENCE REVIEW
ISSN	2095-5138
卷号	8 期号:3 页码:9
摘要	Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called `dissolution-precipitation' (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
关键词	dissolution-precipitation growth two dimensional materials transition metal dichalcogenides uniform clean
资助者	National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Guandong International Science Collaboration Project ; Bureau of Industry and Information Technology of Shenzhen ; Development and Reform Commission of Shenzhen Municipality ; Presidential fund
DOI	10.1093/nsr/nwaa115
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[11974156] ; National Natural Science Foundation of China[51920105002] ; Youth 1000-Talent Program of China ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guandong International Science Collaboration Project[2019A050510001] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Development and Reform Commission of Shenzhen Municipality ; Presidential fund
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000649002700006
出版者	OXFORD UNIV PRESS
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/160820
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Tsinghua Shenzher Int Grad Sch, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Cai, Zhengyang,Lai, Yongjue,Zhao, Shilong,et al. Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides[J]. NATIONAL SCIENCE REVIEW,2021,8(3):9.
APA	Cai, Zhengyang.,Lai, Yongjue.,Zhao, Shilong.,Zhang, Rongjie.,Tan, Junyang.,...&Cheng, Hui-Ming.(2021).Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides.NATIONAL SCIENCE REVIEW,8(3),9.
MLA	Cai, Zhengyang,et al."Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides".NATIONAL SCIENCE REVIEW 8.3(2021):9.