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A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4
Guo, San-Dong1; Zhu, Yu-Tong1; Mu, Wen-Qi1; Chen, Xing-Qiu2,3
Corresponding AuthorGuo, San-Dong(sandongyuwang@163.com)
2021-05-07
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Pages9
AbstractThe realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as the combination of piezoelectricity with a topological insulating phase or ferromagnetism. In this work, a Janus monolayer SrAlGaSe4 is built from the 2D MA(2)Z(4) family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to the lack of inversion symmetry. The unstrained SrAlGaSe4 monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and the nontrivial band topology can hold until the considered 1.16 tensile strain. Moreover, Rashba spin splitting in the conduction bands can exist in a PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer SrAlGaSe4, both in-plane and very weak out-of-plane piezoelectric polarizations can be induced with the application of uniaxial strain. The calculated piezoelectric strain coefficients d(11) and d(31) of monolayer SrAlGaSe4 are -1.865 pm V-1 and -0.068 pm V-1 at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from the 2D MA(2)Z(4) family. To confirm that, similar to SrAlGaSe4, the coexistence of piezoelectricity and topological orders can be realized by applying strain (about 1.04 tensile strain) in the CaAlGaSe4 monolayer. This study suggests that Janus monolayer SrAlGaSe4 is a pure 2D system for a PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological order, which can lead to novel applications in electronics and spintronics.
Funding OrganizationNatural Science Basis Research Plan in Shaanxi Province of China
DOI10.1039/d1tc01165k
Indexed BySCI
Language英语
Funding ProjectNatural Science Basis Research Plan in Shaanxi Province of China[2021JM-456]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000654511800001
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/160839
Collection中国科学院金属研究所
Corresponding AuthorGuo, San-Dong
Affiliation1.Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,et al. A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021:9.
APA Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,&Chen, Xing-Qiu.(2021).A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4.JOURNAL OF MATERIALS CHEMISTRY C,9.
MLA Guo, San-Dong,et al."A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4".JOURNAL OF MATERIALS CHEMISTRY C (2021):9.
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