A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4

doi:10.1039/d1tc01165k

IMR OpenIR

	A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4
	Guo, San-Dong 1; Zhu, Yu-Tong 1; Mu, Wen-Qi 1; Chen, Xing-Qiu 2,3
通讯作者	Guo, San-Dong(sandongyuwang@163.com)
	2021-05-07
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C
ISSN	2050-7526
页码	9
摘要	The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as the combination of piezoelectricity with a topological insulating phase or ferromagnetism. In this work, a Janus monolayer SrAlGaSe4 is built from the 2D MA(2)Z(4) family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to the lack of inversion symmetry. The unstrained SrAlGaSe4 monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and the nontrivial band topology can hold until the considered 1.16 tensile strain. Moreover, Rashba spin splitting in the conduction bands can exist in a PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer SrAlGaSe4, both in-plane and very weak out-of-plane piezoelectric polarizations can be induced with the application of uniaxial strain. The calculated piezoelectric strain coefficients d(11) and d(31) of monolayer SrAlGaSe4 are -1.865 pm V-1 and -0.068 pm V-1 at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from the 2D MA(2)Z(4) family. To confirm that, similar to SrAlGaSe4, the coexistence of piezoelectricity and topological orders can be realized by applying strain (about 1.04 tensile strain) in the CaAlGaSe4 monolayer. This study suggests that Janus monolayer SrAlGaSe4 is a pure 2D system for a PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological order, which can lead to novel applications in electronics and spintronics.
资助者	Natural Science Basis Research Plan in Shaanxi Province of China
DOI	10.1039/d1tc01165k
收录类别	SCI
语种	英语
资助项目	Natural Science Basis Research Plan in Shaanxi Province of China[2021JM-456]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000654511800001
出版者	ROYAL SOC CHEMISTRY
引用统计	被引频次：35[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/160839
专题	中国科学院金属研究所
通讯作者	Guo, San-Dong
作者单位	1.Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,et al. A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021:9.
APA	Guo, San-Dong,Zhu, Yu-Tong,Mu, Wen-Qi,&Chen, Xing-Qiu.(2021).A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4.JOURNAL OF MATERIALS CHEMISTRY C,9.
MLA	Guo, San-Dong,et al."A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe4".JOURNAL OF MATERIALS CHEMISTRY C (2021):9.