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Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer
Xin, Fangqing1; You, Caiyin1; Fu, Huarui1; Hu, Yifeng2; Ma, Li1; Tian, Na1; Cheng, Zhenxiang3; Wang, Xiaohui4; Dou, Pengwei5; Zhang, Jingyan5; Wang, Shouguo5
Corresponding AuthorYou, Caiyin(caiyinyou@xaut.edu.cn)
2021-04-30
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume546Pages:8
AbstractFlexible magnetic films have been widely investigated as a potential sensor to detect the stress or strain induced by bending. Nevertheless, the stable magnetic response is highly required in the case of wearable devices in which the bending-induced sensitivity variation should be minimized. Therefore, it is highly worthwhile to propose an approach to design a flexible magnetic film in need. Here, a flexible magnetic thin film of the potential spin gapless semiconductor CoFeMnSi (CFMS) is fabricated on an aluminum foil (Al foil), which is sensitive to the stress or strain induced under bending; but it was found that inserting a Ti3C2 MXene buffer layer, which acts as a sponge-like behavior, can significantly improve the magnetic response stability inert of the stress or strain. Impressively, the H-c can keep relatively constant under bending and the magnetic hysteresis loops remain unchanged even after repeated bending. Through the finite element calculation, we clarify the working mechanism of stress releasing by the buffer layer owing to the sponge-like elastic behavior. Our work proposes a novel approach to design flexible devices towards in need of tunable or endurable properties, and gives a theoretical instruction of selecting a buffer layer.
KeywordFlexible magnetic film Property stability Spin gapless semiconductor MXene Ti3C2 Bending
Funding OrganizationNational Natural Science Foundation of China ; ISF-NSFC joint research program ; Shaanxi Natural Science Basic Research Plan
DOI10.1016/j.apsusc.2021.149167
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51771145] ; National Natural Science Foundation of China[51625101] ; ISF-NSFC joint research program[51961145305] ; ISF-NSFC joint research program[3373/19] ; Shaanxi Natural Science Basic Research Plan[2020JM-464]
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000620785300002
PublisherELSEVIER
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/161145
Collection中国科学院金属研究所
Corresponding AuthorYou, Caiyin
Affiliation1.Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
2.Xian Univ Technol, Sch Civil Engn & Architecture, Xian 710048, Peoples R China
3.Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2500, Australia
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
5.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Xin, Fangqing,You, Caiyin,Fu, Huarui,et al. Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer[J]. APPLIED SURFACE SCIENCE,2021,546:8.
APA Xin, Fangqing.,You, Caiyin.,Fu, Huarui.,Hu, Yifeng.,Ma, Li.,...&Wang, Shouguo.(2021).Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer.APPLIED SURFACE SCIENCE,546,8.
MLA Xin, Fangqing,et al."Realizing stability of magnetic response under bending in flexible CoFeMnSi films with a sponge-like Ti3C2 MXene buffer layer".APPLIED SURFACE SCIENCE 546(2021):8.
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