| Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus | |
| Han, Ruyue1,2; Feng, Shun1,3; Sun, Dong-Ming1,2; Cheng, Hui-Ming1,2,4 | |
| Corresponding Author | Sun, Dong-Ming(dmsun@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) |
| 2021-04-01 | |
| Source Publication | SCIENCE CHINA-INFORMATION SCIENCES
 |
| ISSN | 1674-733X |
| Volume | 64Issue:4Pages:14 |
| Abstract | Two-dimensional (2D) black arsenic phosphorus (b-AsP), as an alloy of black phosphorus (b-P) with arsenic, has attracted great attention because of its outstanding electronic and optical properties, including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap (0.15-0.3 eV) than the b-P bandgap (0.3-2.0 eV), and thus can be used for mid-infrared photodetectors. In addition, both of them can form various van der Waals (vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed. |
| Keyword | black arsenic phosphorus crystal structure optical property electrical property photodetector |
| DOI | 10.1007/s11432-020-3172-1 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Computer Science ; Engineering |
| WOS Subject | Computer Science, Information Systems ; Engineering, Electrical & Electronic |
| WOS ID | WOS:000627866100001 |
| Publisher | SCIENCE PRESS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/161235 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun, Dong-Ming; Cheng, Hui-Ming |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.Tsinghua Univ, Shenzhen Int Grad Sch, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China |
| Recommended Citation GB/T 7714 | Han, Ruyue,Feng, Shun,Sun, Dong-Ming,et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus[J]. SCIENCE CHINA-INFORMATION SCIENCES,2021,64(4):14. |
| APA | Han, Ruyue,Feng, Shun,Sun, Dong-Ming,&Cheng, Hui-Ming.(2021).Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus.SCIENCE CHINA-INFORMATION SCIENCES,64(4),14. |
| MLA | Han, Ruyue,et al."Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus".SCIENCE CHINA-INFORMATION SCIENCES 64.4(2021):14. |
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