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Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Han, Ruyue1,2; Feng, Shun1,3; Sun, Dong-Ming1,2; Cheng, Hui-Ming1,2,4
Corresponding AuthorSun, Dong-Ming(dmsun@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
2021-04-01
Source PublicationSCIENCE CHINA-INFORMATION SCIENCES
ISSN1674-733X
Volume64Issue:4Pages:14
AbstractTwo-dimensional (2D) black arsenic phosphorus (b-AsP), as an alloy of black phosphorus (b-P) with arsenic, has attracted great attention because of its outstanding electronic and optical properties, including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap (0.15-0.3 eV) than the b-P bandgap (0.3-2.0 eV), and thus can be used for mid-infrared photodetectors. In addition, both of them can form various van der Waals (vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed.
Keywordblack arsenic phosphorus crystal structure optical property electrical property photodetector
DOI10.1007/s11432-020-3172-1
Indexed BySCI
Language英语
WOS Research AreaComputer Science ; Engineering
WOS SubjectComputer Science, Information Systems ; Engineering, Electrical & Electronic
WOS IDWOS:000627866100001
PublisherSCIENCE PRESS
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/161235
Collection中国科学院金属研究所
Corresponding AuthorSun, Dong-Ming; Cheng, Hui-Ming
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
4.Tsinghua Univ, Shenzhen Int Grad Sch, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Han, Ruyue,Feng, Shun,Sun, Dong-Ming,et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus[J]. SCIENCE CHINA-INFORMATION SCIENCES,2021,64(4):14.
APA Han, Ruyue,Feng, Shun,Sun, Dong-Ming,&Cheng, Hui-Ming.(2021).Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus.SCIENCE CHINA-INFORMATION SCIENCES,64(4),14.
MLA Han, Ruyue,et al."Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus".SCIENCE CHINA-INFORMATION SCIENCES 64.4(2021):14.
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