Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus | |
Han, Ruyue1,2; Feng, Shun1,3; Sun, Dong-Ming1,2; Cheng, Hui-Ming1,2,4 | |
通讯作者 | Sun, Dong-Ming(dmsun@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) |
2021-04-01 | |
发表期刊 | SCIENCE CHINA-INFORMATION SCIENCES
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ISSN | 1674-733X |
卷号 | 64期号:4页码:14 |
摘要 | Two-dimensional (2D) black arsenic phosphorus (b-AsP), as an alloy of black phosphorus (b-P) with arsenic, has attracted great attention because of its outstanding electronic and optical properties, including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap (0.15-0.3 eV) than the b-P bandgap (0.3-2.0 eV), and thus can be used for mid-infrared photodetectors. In addition, both of them can form various van der Waals (vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed. |
关键词 | black arsenic phosphorus crystal structure optical property electrical property photodetector |
DOI | 10.1007/s11432-020-3172-1 |
收录类别 | SCI |
语种 | 英语 |
WOS研究方向 | Computer Science ; Engineering |
WOS类目 | Computer Science, Information Systems ; Engineering, Electrical & Electronic |
WOS记录号 | WOS:000627866100001 |
出版者 | SCIENCE PRESS |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/161235 |
专题 | 中国科学院金属研究所 |
通讯作者 | Sun, Dong-Ming; Cheng, Hui-Ming |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.Tsinghua Univ, Shenzhen Int Grad Sch, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Han, Ruyue,Feng, Shun,Sun, Dong-Ming,et al. Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus[J]. SCIENCE CHINA-INFORMATION SCIENCES,2021,64(4):14. |
APA | Han, Ruyue,Feng, Shun,Sun, Dong-Ming,&Cheng, Hui-Ming.(2021).Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus.SCIENCE CHINA-INFORMATION SCIENCES,64(4),14. |
MLA | Han, Ruyue,et al."Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus".SCIENCE CHINA-INFORMATION SCIENCES 64.4(2021):14. |
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