TEM study on the morphology and interface microstructure of C/C-SiC composites fabricated by liquid infiltration

doi:10.1016/j.matchar.2021.111055

IMR OpenIR

	TEM study on the morphology and interface microstructure of C/C-SiC composites fabricated by liquid infiltration
	Zhang, K. X.1,3; Guo, X. S.2; Cheng, Y. X.3; Zhang, F. Q.4; He, L. L.3
通讯作者	He, L. L.(llhe@imr.ac.cn)
	2021-05-01
发表期刊	MATERIALS CHARACTERIZATION
ISSN	1044-5803
卷号	175 页码:7
摘要	Carbon fiber reinforced carbon and silicon carbide dual matrix composites (C/C-SiC) have been widely used in aerospace field thanks to their superior high temperature properties. However, the interfacial microstructure of the composites is still not thoroughly understood in details. In this study, we focus on the morphology of the reaction-formed SiC and the interfacial microstructure between carbon and SiC in the C/C-SiC composites fabricated by liquid silicon infiltration performed at 1700 ?C. The fine microstructure of the composites was investigated systematically by using transmission electron microscopy. The results show that two main types of interface are formed in the composites: (i) the fine-grained SiC is formed adjacent to the pyrolytic carbon, followed by a layer of coarse-grained SiC; and (ii) some extremely large SiC grains are formed directly on the pyrolytic carbon, and different pyrolytic carbon coatings can be connected by these large SiC grains. Additionally, some subgrains with grain size of a few tens of nanometers or even smaller can be found near the pyrolytic carbon or carbon fibers. The formation mechanism of the SiC/carbon interface is also discussed based on the fine microstructure observed.
关键词	Composites C C-SiC Liquid silicon infiltration TEM Morphology Interfacial microstructure
资助者	National Basic Research Program of China (973 Program) ; Guangxi Base and Talent Project ; State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, China ; Science and Technology Major Project (New Materials) of Yunnan, China ; Natural Science Foundation of Yunnan, China ; Youth Promotion Project
DOI	10.1016/j.matchar.2021.111055
收录类别	SCI
语种	英语
资助项目	National Basic Research Program of China (973 Program)[2011CB605803] ; Guangxi Base and Talent Project[AD19110108] ; State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, China[SKL-SPM-201805] ; Science and Technology Major Project (New Materials) of Yunnan, China[2018ZE001] ; Science and Technology Major Project (New Materials) of Yunnan, China[2019ZE001] ; Natural Science Foundation of Yunnan, China[2019FA048] ; Youth Promotion Project[2019KY0251]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Materials Science, Characterization & Testing
WOS记录号	WOS:000648436100006
出版者	ELSEVIER SCIENCE INC
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/161506
专题	中国科学院金属研究所
通讯作者	He, L. L.
作者单位	1.Guilin Univ Elect Technol, Guangxi Collaborat Innovat Ctr Struct & Property, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China 2.Pingxiang Univ, Engn & Technol Res Ctr Environm Protect Mat & Equ, Pingxiang 337055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Cent South Univ, Sci & Technol High Strength Struct Mat Lab, Changsha 410083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, K. X.,Guo, X. S.,Cheng, Y. X.,et al. TEM study on the morphology and interface microstructure of C/C-SiC composites fabricated by liquid infiltration[J]. MATERIALS CHARACTERIZATION,2021,175:7.
APA	Zhang, K. X.,Guo, X. S.,Cheng, Y. X.,Zhang, F. Q.,&He, L. L..(2021).TEM study on the morphology and interface microstructure of C/C-SiC composites fabricated by liquid infiltration.MATERIALS CHARACTERIZATION,175,7.
MLA	Zhang, K. X.,et al."TEM study on the morphology and interface microstructure of C/C-SiC composites fabricated by liquid infiltration".MATERIALS CHARACTERIZATION 175(2021):7.