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Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors
Zou, Jingyun1,2; Cai, Zhengyang1,2; Lai, Yongjue1,2; Tan, Junyang1,2; Zhang, Rongjie1,2; Feng, Simin1,2; Wang, Gang3; Lin, Junhao3; Liu, Bilu1,2; Cheng, Hui-Ming1,2,4
Corresponding AuthorLiu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
2021-04-27
Source PublicationACS NANO
ISSN1936-0851
Volume15Issue:4Pages:7340-7347
AbstractDoping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.
Keyword2D materials molybdenum disulfide MoS2 vanadium substitutional doping synaptic transistor
Funding OrganizationNational Natural Science Foundation of China ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Project ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality
DOI10.1021/acsnano.1c00596
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51920105002] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[11974156] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project[JCYJ20200109144620815] ; Shenzhen Basic Research Project[JCYJ20200109144616617] ; Shenzhen Basic Research Project[KQTD20190929173815000] ; Presidential fund ; Development and Reform Commission of Shenzhen Municipality
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000645436800119
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/161574
Collection中国科学院金属研究所
Corresponding AuthorLiu, Bilu; Cheng, Hui-Ming
Affiliation1.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
2.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, SUSTech Core Res Facil, Shenzhen 518055, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Zou, Jingyun,Cai, Zhengyang,Lai, Yongjue,et al. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors[J]. ACS NANO,2021,15(4):7340-7347.
APA Zou, Jingyun.,Cai, Zhengyang.,Lai, Yongjue.,Tan, Junyang.,Zhang, Rongjie.,...&Cheng, Hui-Ming.(2021).Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.ACS NANO,15(4),7340-7347.
MLA Zou, Jingyun,et al."Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors".ACS NANO 15.4(2021):7340-7347.
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