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Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films
Yu, Biao1,2; Yang, Bing1; Li, Haining1,2; Lu, Jiaqi1,2; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,3
Corresponding AuthorYang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
2021-06-30
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume552Pages:9
AbstractThe effect of three different surface oxidation approaches (air annealing, acid oxidation and oxygen plasma) on microstructural evolution and silicon vacancy (SiV) photoluminescence (PL) in the nanocrystalline diamond (NCD) films is investigated. All oxidation methods lead to the bonding of oxygen functional groups at diamond surface. The SiV centers exhibit the PL enhancement of about 105-fold in the air-annealed sample, compared with the as-deposited films. Nevertheless, the PL enhancement is about 7-fold and 2-fold in the acid- and plasma-treated samples, respectively. Combination of Raman spectra, HRTEM imaging with cross-sectional oxygen mapping confirms that such different PL behavior originates from the formed different thick oxidation layers. The air oxidation results in a thicker oxidation layer with improved crystallinity than the other two methods. In addition, when the air-annealed films are re-terminated with hydrogen, the SiV PL emission tends to drop remarkably under the same crystallinity. It indicates that hydrogen termination leads to the PL quenching of SiV centers. Therefore, our work reveals that the direct bonding of oxygen to sp(3) carbon or the improvement of diamond crystalline quality plays an effective role in the PL enhancement of SiV centers during the oxidation of hydrogen-terminated NCD particles or films.
KeywordColor centers Photoluminescence Nano-crystalline diamond Surface oxidation
Funding OrganizationNational Natural Science Foundation of China ; Liaoning Provincial Natural Science Foundation of China
DOI10.1016/j.apsusc.2021.149475
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51872294] ; Liaoning Provincial Natural Science Foundation of China[2019-MS-331]
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000639695100001
PublisherELSEVIER
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/162035
Collection中国科学院金属研究所
Corresponding AuthorYang, Bing; Jiang, Xin
Affiliation1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Dept Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
Recommended Citation
GB/T 7714
Yu, Biao,Yang, Bing,Li, Haining,et al. Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films[J]. APPLIED SURFACE SCIENCE,2021,552:9.
APA Yu, Biao.,Yang, Bing.,Li, Haining.,Lu, Jiaqi.,Huang, Nan.,...&Jiang, Xin.(2021).Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films.APPLIED SURFACE SCIENCE,552,9.
MLA Yu, Biao,et al."Effect of surface oxidation on photoluminescence of silicon vacancy color centers in the nanocrystalline diamond films".APPLIED SURFACE SCIENCE 552(2021):9.
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