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Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure
Zhang, Jian1,2; Wang, Weizhen3; Wang, Nan1,2; Wang, Mingguang1,2; Qi, Yang1,2
通讯作者Wang, Mingguang(wangmg@imp.neu.edu.cn) ; Qi, Yang(qiyang@imp.neu.edu.cn)
2021-06-15
发表期刊JOURNAL OF COLLOID AND INTERFACE SCIENCE
ISSN0021-9797
卷号592页码:291-295
摘要Due to the crucial influence of interface structure and strain on the performance of heterojunctions, they have received extensive attention in recent years. In this article, the interface structure and strain of the Bi2Sr2CuO6+delta d(Bi-2201)/MgO superconducting heterojunction prepared by molecular beam epitaxy were investigated by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), energy-dispersive X-ray spectroscopy (EDX), and geometric phase analysis (GPA). The interfacial atomic sequence is determined as MgO-(CuO-CuO-Cu/BiO)-(Bi-2201)(n), where a 0.53 nm thick CuO interlayer accompanied by Bi/Cu atomic co-occupation is observed between the Bi-2201 film and the MgO substrate. In addition, there is a typical coherent lattice-matching epitaxial interface between CuO/MgO with no defects and a semi-coherent domain-matching epitaxial interface between Bi-2201/CuO accompanied by an ideal misfit dislocation network. Because misfit dislocations almost compensate for the strain caused by lattice mismatch, the final Bi-2201 film undergoes in-plane compressive strain (epsilon(xx) similar to -0.573%) rather than expected tensile strain relative to bulk Bi-2201, which is attributed to the thermal expansion mismatch. The compressive strain gradually releases as the distance from the heterointerface increases. (C) 2021 Elsevier Inc. All rights reserved.
关键词High-T-c superconductors Thin films Interface structure Microstructure Domain matching epitaxy Thermal expansion mismatch Residual strain
资助者National Natural Science Foundation of China ; China Postdoctoral Science Foundation ; Postdoctoral Foundation of Northeastern University
DOI10.1016/j.jcis.2021.02.063
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[61961116] ; China Postdoctoral Science Foundation[2018M631801] ; Postdoctoral Foundation of Northeastern University[20180301]
WOS研究方向Chemistry
WOS类目Chemistry, Physical
WOS记录号WOS:000634142400002
出版者ACADEMIC PRESS INC ELSEVIER SCIENCE
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/162077
专题中国科学院金属研究所
通讯作者Wang, Mingguang; Qi, Yang
作者单位1.Northeastern Univ, Sch Mat Sci & Engn, Dept Mat Phys & Chem, Shenyang 110819, Liaoning, Peoples R China
2.Northeastern Univ, State Key Lab Rolling & Automat, Shenyang 110819, Liaoning, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
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Zhang, Jian,Wang, Weizhen,Wang, Nan,et al. Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE,2021,592:291-295.
APA Zhang, Jian,Wang, Weizhen,Wang, Nan,Wang, Mingguang,&Qi, Yang.(2021).Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure.JOURNAL OF COLLOID AND INTERFACE SCIENCE,592,291-295.
MLA Zhang, Jian,et al."Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure".JOURNAL OF COLLOID AND INTERFACE SCIENCE 592(2021):291-295.
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