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Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current
Lv, Meijuan1,2; Wei, Qinwei1,2; Cao, Shuo1,2; Guo, Jingdong1,2; Ren, Wencai1,2; Cheng, Huiming1,2
Corresponding AuthorGuo, Jingdong(jdguo@imr.ac.cn)
2021-04-10
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Pages10
AbstractFabricating conductive graphene films by assembling graphene oxide (GO) sheets is highly desired for many applications, however a very high temperature around 3000 K is usually required to repair the sp(2) structure for traditional thermal annealing. Here, an electric field assisted Joule heating method was developed to repair the sp(2) structure in GO at a temperature lower than 1500 degrees C. The resulting free-standing graphene film shows a high electrical conductivity (similar to 1840 S/cm) and high C/O ratio (132), both of which are much higher than those of thermally reduced GO films under the same temperature. These findings provide new possibilities for fabricating high-quality graphene films in an energy-efficient and low-cost manner.
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China
DOI10.1007/s10854-021-05797-7
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2020YFA0714900] ; National Natural Science Foundation of China[51971231]
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000638869700006
PublisherSPRINGER
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/162474
Collection中国科学院金属研究所
Corresponding AuthorGuo, Jingdong
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Lv, Meijuan,Wei, Qinwei,Cao, Shuo,et al. Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2021:10.
APA Lv, Meijuan,Wei, Qinwei,Cao, Shuo,Guo, Jingdong,Ren, Wencai,&Cheng, Huiming.(2021).Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,10.
MLA Lv, Meijuan,et al."Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021):10.
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