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High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors
Li, Yahui1,2,3; Zheng, Miaomiao2,4; Yao, Jian2,4; Gong, Wenbin5; Li, Yijun6; Tang, Jianshi6; Feng, Shun7; Han, Ruyue7; Sui, Qicheng2,3; Qiu, Song1,2; Kang, Lixing1,2; Jin, Hehua1,2; Sun, Dongming7; Li, Qingwen1,2
Corresponding AuthorQiu, Song(sqiu2010@sinano.ac.cn) ; Jin, Hehua(hhjin2008@sinano.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn) ; Li, Qingwen(qwli2007@sinano.ac.cn)
2021-10-01
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Pages8
AbstractMonochiral single-walled carbon nanotubes (SWCNTs) are promising materials with potential applications in 3D integrated circuits and optoelectronic hybrid circuits. However, the purity and device performance of monochiral SWCNTs are still far lower than expected. Here, the authors demonstrate that specific monochiral SWCNTs can be wrapped by conjugated polymers containing pyridine units, and the supramolecular assemblies show surprising suspension stability even after high-intensity ultracentrifugation. Additionally, two novel methods are developed, namely, enhanced ultracentrifugation (E-UCG) and stepwise extraction processing (STEP), which successfully achieve isolation of (10,8) and (12,5) SWCNTs with respective diameters of 1.24 and 1.2 nm at high monochiral purity (92.3% and 95.6%). Their S-11 absorption and fluorescence emission peaks are both at approximate to 1.5 mu m (optical telecommunications C-band). Both micro- and nanoscale field-effect transistor (FET) devices can be fabricated from the as-isolated (10,8) SWCNTs, and these FETs exhibit excellent electrical performance and a high semiconducting purity of up to 99.94%.
Keywordfield-effect transistors carbon nanotubes conjugated polymers monochiral
DOI10.1002/adfm.202107119
Indexed BySCI
Language英语
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000702457200001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/166675
Collection中国科学院金属研究所
Corresponding AuthorQiu, Song; Jin, Hehua; Sun, Dongming; Li, Qingwen
Affiliation1.Univ Sci & Technol China, Sch Nanotech & Nanobion, 96 Jinzhai Rd, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Adv Nanomat, 398 Ruoshui Rd, Suzhou 215123, Peoples R China
3.Univ Sci & Technol China, Nano Sci & Technol Inst, 166 Renai Rd, Suzhou 215123, Peoples R China
4.Shanghai Tech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China
5.Xuzhou Univ Technol, Sch Phys & Energy, Xuzhou 221018, Jiangsu, Peoples R China
6.Tsinghua Univ, Beijing Innovat Ctr Future Chips ICFC, Inst Microelect, 30 Shuangqing Rd, Beijing 100084, Peoples R China
7.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Li, Yahui,Zheng, Miaomiao,Yao, Jian,et al. High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2021:8.
APA Li, Yahui.,Zheng, Miaomiao.,Yao, Jian.,Gong, Wenbin.,Li, Yijun.,...&Li, Qingwen.(2021).High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors.ADVANCED FUNCTIONAL MATERIALS,8.
MLA Li, Yahui,et al."High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors".ADVANCED FUNCTIONAL MATERIALS (2021):8.
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