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Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response
Chen, Jianjin1; Shen, Longhai1; Qi, Dongli1; Wu, Lijun1; Li, Xiang1; Song, Jianyu1; Zhang, Xinglai2
Corresponding AuthorShen, Longhai(shenlonghai@sylu.edu.cn) ; Zhang, Xinglai(zhangxl@imr.ac.cn)
2022-01-15
Source PublicationCERAMICS INTERNATIONAL
ISSN0272-8842
Volume48Issue:2Pages:2802-2810
AbstractAl1-xInxN films allow the bandgap to be adjusted in a wide range, which is fascinating for optoelectronic applications, especially in ultraviolet-visible and wavelength-selective photodetection. Herein, the single-phase Al1-xInxN films with tunable bandgap are synthesized via a well-designed radio-frequency (RF) magnetron sputtering method. By means of placing an In sheet on the Al target, we can control the Al and In composition in Al1-xInxN films via only changing the RF power on the target. With increasing the RF power from 100 to 300 W, the In composition (x value) in Al1-xInxN films can be adjusted from 0.94 to 0.34. Accordingly, the bandgaps are adjusted from 2.20 to 2.95 eV. Importantly, the photoresponse wavelengths of Al1-xInxN films are broadened from UV to visible light with raising the x value. The photoresponsivity of the Al1-xInxN film photodetectors is 0.0124 mA/W (x = 0.34), 0.118 mA/W (x = 0.52), and 0.126 mA/W (x = 0.67) under 365 nm, 532 nm, and 650 nm illumination, respectively. The corresponding response times are as fast as 2.37 s, 1.98 s, and 1.39 s, respectively. Our synthesis strategy of Al1-xInxN films proposed in this work will open exciting opportunities for semiconductor bandgap adjustment and wavelength-selective detection of optoelectronic devices.
KeywordAl1 xInxN films Magnetron sputtering Tunable bandgap Photodetectors
Funding OrganizationOpening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education ; Basical Research Program of Educational Commission of Liaoning province ; Natural Science Foundation Guidance Plan Project of Liaoning ; Natural Science Foundation of Liaoning Province
DOI10.1016/j.ceramint.2021.10.069
Indexed BySCI
Language英语
Funding ProjectOpening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education[2017004] ; Basical Research Program of Educational Commission of Liaoning province[LG 201910] ; Basical Research Program of Educational Commission of Liaoning province[LG 201716] ; Natural Science Foundation Guidance Plan Project of Liaoning[2019-ZD-0254] ; Natural Science Foundation of Liaoning Province[2019-MS-333]
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics
WOS IDWOS:000724669200002
PublisherELSEVIER SCI LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/167556
Collection中国科学院金属研究所
Corresponding AuthorShen, Longhai; Zhang, Xinglai
Affiliation1.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Chen, Jianjin,Shen, Longhai,Qi, Dongli,et al. Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response[J]. CERAMICS INTERNATIONAL,2022,48(2):2802-2810.
APA Chen, Jianjin.,Shen, Longhai.,Qi, Dongli.,Wu, Lijun.,Li, Xiang.,...&Zhang, Xinglai.(2022).Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response.CERAMICS INTERNATIONAL,48(2),2802-2810.
MLA Chen, Jianjin,et al."Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response".CERAMICS INTERNATIONAL 48.2(2022):2802-2810.
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