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Bi2Te3合金薄膜的电沉积制备工艺及热电性能研究
其他题名Investigation of Electrodeposition and Thermoelectric Properties of Bi2Te3 Thin Film
薄向辉
学位类型硕士
导师杨永进
2008-05-31
学位授予单位中国科学院金属研究所
学位授予地点金属研究所
学位专业材料加工工程
关键词Bi2te3合金薄膜 电沉积 导电聚苯胺 热电性能 泡沫结构
摘要碲化铋(Bi2Te3)合金是一种室温下性能最好、应用最广泛的热电材料。由于薄膜热电材料比块状热电材料具有更好的热电性能,近年来碲化铋热电薄膜的制备已成为热电材料领域研究的热点之一。本文选用导电聚苯胺作为基体,利用电沉积工艺成功制备了二维和三维连通泡沫碲化铋薄膜;系统研究了导电聚苯胺薄膜的导电特性、电沉积参数(阴极电流密度、沉积电位以及溶液组分)对沉积层组分、结构和性能的影响;初步探索了宏观结构及骨架材料变化对Bi2Te3材料热电性能的影响。得出以下主要结论: 导电聚苯胺薄膜导电特性的研究结果表明:聚苯胺薄膜电阻随着膜层厚度的增加而降低,随着热处理温度的增加而增大,热处理气氛对聚苯胺薄膜的电阻变化有显著的影响,在氮气和氩气气氛下经过453K保温3h处理,薄膜电导率由未经处理的57S/cm分别变为0和15S/cm。 由循环伏安曲线确定Bi2Te3在导电聚苯胺电极上的沉积电位范围为-125mV~-340mV,Bi2Te3合金中Te的含量随沉积电位呈抛物线形变化,在-200mV时,含量最低为61%;薄膜微观组织结构随着沉积电位的降低首先由片层状向针状过渡,当电位低于-265mV后又变成片层状结构。 对Bi2Te3薄膜热电性能的研究结果表明:(1)对导电聚苯胺绝缘化处理能大幅度提高Bi2Te3薄膜的Seebeck系数,这是由于绝缘化处理消除了导电基体的分流作用;(2)泡沫状Bi2Te3薄膜的Seebeck系数要明显大于该合金平面薄膜的Seebeck系数;(3)用于制备泡沫Bi2Te3薄膜的骨架材料对热电性能有影响,以酚醛树脂和碳化硅为骨架制备的泡沫Bi2Te3薄膜的Seebeck系数值分别比平面薄膜的Seebeck系数提高了64.7%和145%,此差异可能与存在于沉积层与基体之间的应力有关。
其他摘要Bismuth telluride (Bi2Te3) is one of the most widely studied and used thermoelectric materials. Since thermoelectric thin films have better properties than bulk ones, fabrication and characterization of thermoelectric thin films have become a key subject in the field of thermoelectric materials in recent years. In this thesis, Bi2Te3 films with two-dimensional and three-dimensional structures were successfully prepared by electrodeposition on conductive polyaniline (cPANI) substrate. The variation of electric conductivity of cPANI films with temperature and the influence of deposition parameters on composition, microstructure and properties of the as-deposited films have been systematically studied. The effects of macrostructure and the substrates on the Seebeck coefficient of Bi2Te3 film were also explored. The main results obtained are as follows: It is revealed that the conductivity of the cPANI is affected by temperature and atmosphere during heat treatment. The electric conductivity of the cPANI films changed from 57S/cm to 0 and15S/cm, respectively, when the films were heat-treated at453K in nitrogen and argon for 3h. The potential range for deposition of Bi2Te3 on the cPANI electrode was between -125 mV and -340 mV based on the cyclic voltammetry (CV) measurement. The deposition potential greatly influenced not only the Te content in Bi2Te3 films, but also the structure and Seebeck coefficient of the deposited layers, and Te content reached the minimum when -200mV was applied. Investigation on the thermoelectric properties of the as-deposited Bi2Te3 thin films indicates: (1) The Seebeck coefficient of the alloy thin film was much improved after the insulation treatment because the substrate’s shunting action was eliminated. (2)Foam Bi2Te3 thin films exhibited much larger Seebeck coefficients than their bulk counterparts. (3)The Seebeck coefficients of foam Bi2Te3 alloys fabricated on phenolic resin and silicon carbide substrates with the same volume fraction and pore size are 64.7% and 145% higher than that of planar films respectively. We supposed that the influence of substrate on the Seebeck coefficient may be ascribed to the stress developed between the substrate and the deposited film.
页数67
语种中文
文献类型学位论文
条目标识符http://ir.imr.ac.cn/handle/321006/17172
专题中国科学院金属研究所
推荐引用方式
GB/T 7714
薄向辉. Bi2Te3合金薄膜的电沉积制备工艺及热电性能研究[D]. 金属研究所. 中国科学院金属研究所,2008.
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